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MATB-435US
`
`- 20 -
`
`PATENT
`
`What is Claimed:
`
`1.
`
`A light emitting chip comprising:
`
`a light emission structure comprising:
`
`a p-type semiconductor layer,
`
`an n-type semiconductor layer, and
`
`an active layer between the p-type semiconductor layer and the n-type
`
`semiconductor layer; and
`
`at least one light emitting unit comprising:
`
`a light emitting diode (LED) portion formed from the light emission
`
`structure, and
`
`a plurality of light receiving diode (LRD) portions formed from the light
`
`emission structure, the plurality of LRD portions serially connected and
`
`configured to surround the LED portion, the plurality of LRD portions optically
`
`coupled to the LED portion to receive total internal reflection (TIR) light from the
`
`LED portion and configured to convert the TIR light to a photocurrent.
`
`2.
`
`The light emitting chip according to claim 1, wherein the plurality of LRD
`
`portions are electrically connected in parallel with the LED portion.
`
`3.
`
`The light emitting chip according to claim 1, wherein the at least one light
`
`emitting unit includes a further LED portion formed from the light emission structure, and
`
`the plurality of LRD portions are electrically connected in parallel with the further
`
`LED portion.
`
`4.
`
`The light emitting chip according to claim 1, wherein the at least one light
`
`emitting unit including a plurality of light emitting units arranged to form an LED array.
`
`5.
`
`The light emitting chip according to claim 1, wherein the light emission
`
`structure is configured to emit light via the p-type semiconductor layer.
`
`

`

`MATB-435US
`
`- 21 -
`
`PATENT
`
`6.
`
`The light emitting chip according to claim 1, wherein the light emission
`
`structure is configured to emit light via the n-type semiconductor layer.
`
`7.
`
`The light emitting chip according to claim 1, wherein the active layer
`
`includes a single quantum well (SQW) structure or a multi quantum well (MQW) structure.
`
`8.
`
`The light emitting chip according to claim 1, wherein the at least one light
`
`emitting unit includes:
`
`an electrode layer formed on one of the p-type semiconductor layer and the n-
`
`type semiconductor layer, the electrode layer being substantially transparent to light having
`
`a predetermined wavelength,
`
`a first electrode coupled to the n-type semiconductor layer, and
`
`a second electrode coupled to the p—type semiconductor layer.
`
`9.
`
`The light emitting chip according to claim 1, wherein the active layer is
`
`formed from a semiconductor material including at least one of InmAlnGa1.m-nN (where
`
`O<msl, Osnsl, O<m+nsl) or IanamN (where O<m<1).
`
`10.
`
`The light emitting chip according to claim 1, wherein the p—type
`
`semiconductor layer and the n—type semiconductor layer are formed from a semiconductor
`
`material including at least one of AlmGa1-mN (where Osmsl), ZnSe, InGaN, GaP, AlGaInP,
`
`AlGaP, GaAsP or AlGaAs.
`
`11.
`
`A light emitting unit cell comprising:
`
`a first light emitting diode (LED) electrically connected to a power source;
`
`a plurality of light receiving diodes (LRDs) connected in series, the plurality of
`
`LRDs optically coupled to the first LED to receive total internal reflection (TIR) light from the
`
`first LED and configured to convert the TIR light to a photocurrent; and
`
`a second LED electrically connected in parallel with the plurality of LRDs.
`
`

`

`MATB—435US
`
`- 22 -
`
`PATENT
`
`12.
`
`The light emitting unit cell according to claim 11, wherein the
`
`photocurrent is applied to the second LED as a further power source.
`
`13.
`
`The light emitting unit cell according to claim 11, wherein a cathode of
`
`one of the plurality of LRDs is electrically connected to a cathode of the first LED.
`
`14.
`
`The light emitting unit cell according to claim 11, wherein each of the
`
`plurality of LRDs is configured to receive the TIR light without emitting light.
`
`15.
`
`The light emitting unit cell according to claim 11, further comprising:
`
`a further plurality of LRDS optically coupled to the second LED to receive further
`
`TIR light from the second LED and to convert the further TIR light to a further photocurrent;
`
`and
`
`a third LED electrically connected in parallel with the further plurality of LRDs.
`
`16.
`
`A light emitting unit cell comprising:
`
`a light emitting diode (LED) electrically connected to a power source; and
`
`a plurality of light receiving diodes (LRDs) connected in series, the plurality of
`
`LRDs optically coupled to the LED to receive total internal reflection (TIR) light from the LED
`
`and configured to convert the TIR light to a photocurrent,
`
`wherein the plurality of LRDs are electrically coupled to the LED to feed back the
`
`photocurrent to the LED.
`
`17.
`
`The light emitting unit cell according to claim 16, wherein each of the
`
`plurality of LRDs is configured to receive the TIR light without emitting light.
`
`18.
`
`The light emitting unit cell according to claim 16, wherein the plurality of
`
`LRDs are electrically connected in parallel with the LED.
`
`19.
`
`A method of forming a light emitting chip, the method comprising:
`
`

`

`MATB-435US
`
`- 23 -
`
`PATENT
`
`forming a light emission structure including a p-type semiconductor layer, an n-
`
`type semiconductor layer and an active layer between the p-type semiconductor layer and
`
`the n-type semiconductor layer; and
`
`forming at least one light emitting unit from the light emission structure
`
`including:
`
`forming a light emitting diode (LED) portion, and
`
`forming a plurality of light receiving diode (LRD) portions to surround the
`
`LED portion, the plurality of LRD portions being serially connected to each other
`
`and optically coupled to the LED portion,
`
`wherein the plurality of LRD portions receive total internal reflection (TIR) light
`
`from the LED portion and convert the TIR light to a photocurrent.
`
`20.
`
`The method according to claim 19, the forming of the light emission
`
`structure including:
`
`forming an electrode layer on one of the p-type semiconductor layer and the n—
`
`type semiconductor layer, the electrode layer being substantially transparent to light having
`
`a predetermined wavelength,
`
`forming a first electrode to be electrically coupled to the n-type semiconductor
`
`layer, and
`
`layer.
`
`forming a second electrode to be electrically coupled to the p-type semiconductor
`
`21.
`
`The method according to claim 19, wherein the plurality of LRD portions
`
`are formed to be electrically connected in parallel with the LED portion.
`
`22.
`
`The method according to claim 19, the forming of the at least one light
`
`emitting unit including:
`
`forming a further LED portion, and
`
`

`

`MATB-435US
`
`- 24 -
`
`PATENT
`
`forming the plurality of LRD portions to be electrically connected in parallel with
`
`the further LED portion.
`
`23.
`
`The method according to claim 19, wherein the at least one light emitting
`
`unit includes a plurality of light emitting units and the light emitting chip is formed to
`
`including the plurality of light emitting units arranged as an LED array.
`
`

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