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UNITED STATES PATENT AND TRADEMARK OFFICE
`
`
`
`UNITED STATES DEPARTMENT OF COMMERCE
`United States Patent and Trademark Office
`Address: COMMISSIONER FOR PATENTS
`PO. Box 1450
`Alexandria, Virginia 2231371450
`www.uspto.gov
`
`15/163,675
`
`05/25/2016
`
`NAOKI HAYASHI
`
`PANDP0165US
`
`5700
`
`MARK D. SARALINO (PAN)
`RENNER, OTTO, BOISSELLE & SKLAR, LLP
`1621 EUCLID AVENUE
`19TH FLOOR
`CLEVELAND, OH 44115
`
`SLAWSKL MAGALIP
`
`ART UNIT
`1721
`
`PAPER NUMBER
`
`NOTIFICATION DATE
`
`DELIVERY MODE
`
`09/19/2018
`
`ELECTRONIC
`
`Please find below and/or attached an Office communication concerning this application or proceeding.
`
`The time period for reply, if any, is set in the attached communication.
`
`Notice of the Office communication was sent electronically on above—indicated "Notification Date" to the
`
`following e—mail address(es):
`
`ipdoeket@rennerotto.eom
`
`PTOL-90A (Rev. 04/07)
`
`

`

`Off/09 A0170” Summary
`
`Application No.
`15/163,675
`Examiner
`Magali P Slawski
`
`Applicant(s)
`HAYASHI et al.
`Art Unit
`AIA Status
`1721
`Yes
`
`- The MAILING DA TE of this communication appears on the cover sheet wit/7 the correspondence address -
`Period for Reply
`
`A SHORTENED STATUTORY PERIOD FOR REPLY IS SET TO EXPIRE g MONTHS FROM THE MAILING
`DATE OF THIS COMMUNICATION.
`Extensions of time may be available under the provisions of 37 CFR 1.136(a). In no event, however, may a reply be timely filed
`after SIX (6) MONTHS from the mailing date of this communication.
`|f NO period for reply is specified above, the maximum statutory period will apply and will expire SIX (6) MONTHS from the mailing date of this communication.
`-
`- Failure to reply within the set or extended period for reply will, by statute, cause the application to become ABANDONED (35 U.S.C. § 133).
`Any reply received by the Office later than three months after the mailing date of this communication, even if timely filed, may reduce any
`earned patent term adjustment. See 37 CFR 1.704(b).
`
`Status
`
`1). Responsive to communication(s) filed on 14 August 2018.
`[:1 A declaration(s)/affidavit(s) under 37 CFR 1.130(b) was/were filed on
`
`2a)D This action is FINAL.
`
`2b)
`
`This action is non-final.
`
`3)[:] An election was made by the applicant in response to a restriction requirement set forth during the interview on
`; the restriction requirement and election have been incorporated into this action.
`
`4)[:] Since this application is in condition for allowance except for formal matters, prosecution as to the merits is
`closed in accordance with the practice under Expat/7e Quay/e, 1935 CD. 11, 453 O.G. 213.
`
`Disposition of Claims*
`
`5)
`
`Claim(s) fl is/are pending in the application.
`
`5a) Of the above claim(s)
`
`is/are withdrawn from consideration.
`
`E] Claim(s)
`
`is/are allowed.
`
`Claim(s) fl is/are rejected.
`
`[:1 Claim(s) _ is/are objected to.
`
`) ) ) )
`
`6 7
`
`8
`
`
`
`are subject to restriction and/or election requirement
`[j Claim(s)
`9
`* If any claims have been determined aflowabie. you may be eligible to benefit from the Patent Prosecution Highway program at a
`
`participating intellectual property office for the corresponding application. For more information, please see
`
`http://www.uspto.gov/patents/init events/pph/index.jsp or send an inquiry to PPeredback@uspto.gov.
`
`Application Papers
`10)[:] The specification is objected to by the Examiner.
`
`11)[:] The drawing(s) filed on
`
`is/are: a)D accepted or b)l:] objected to by the Examiner.
`
`Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CFR 1.85(a).
`Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CFR 1.121 (d).
`
`Priority under 35 U.S.C. § 119
`12):] Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)-(d) or (f).
`Certified copies:
`
`a)D All
`
`b)I:J Some**
`
`c)C] None of the:
`
`1.[:]
`
`Certified copies of the priority documents have been received.
`
`2.[:]
`
`Certified copies of the priority documents have been received in Application No.
`
`3.[:] Copies of the certified copies of the priority documents have been received in this National Stage
`application from the International Bureau (PCT Rule 17.2(a)).
`
`** See the attached detailed Office action for a list of the certified copies not received.
`
`Attachment(s)
`
`1)
`
`Notice of References Cited (PTO-892)
`
`2) E] Information Disclosure Statement(s) (PTO/SB/08a and/or PTO/SB/08b)
`Paper No(s)/Mail Date_
`U.S. Patent and Trademark Office
`
`3) C] Interview Summary (PTO-413)
`Paper No(s)/Mail Date
`4) CI Other-
`
`PTOL-326 (Rev. 11-13)
`
`Office Action Summary
`
`Part of Paper No./Mai| Date 20180914
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`Page 2
`
`Notice of Pre-AIA or AIA Status
`
`The present application, filed on or after March 16, 2013, is being examined
`
`under the first inventor to file provisions of the AIA.
`
`Continued Examination Under 37 CFR 1. 1 14
`
`A request for continued examination under 37 CFR 1.114, including the fee set
`
`forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this
`
`application is eligible for continued examination under 37 CFR 1.114, and the fee set
`
`forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action
`
`has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on August
`
`14,2018 has been entered.
`
`On August 14, 2018, Applicant amended claim 1.
`
`Summary
`
`From the office action mailed June 1, 2018, the 103 rejections have been
`
`overcome by amendment.
`
`New in this office action are 103 rejections necessitated by amendment.
`
`The text of those sections of Title 35, U.S. Code not included in this action can
`
`be found in a prior Office action.
`
`Claim Rejections - 35 USC § 103
`
`Claims 1-7 is/are rejected under 35 U.S.C. 103 as being unpatentable over Noh
`
`et al. ("Nanostructured TiOz/CHsNHstls heterojunction solar cells employing spiro-
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`Page 3
`
`OMeTAD/Co-complex as hole-transporting material" J. Mater. Chem. A, 2013, 1,
`
`11842—11847), hereinafter Noh, in view of Kawasaki et al. (US 20150380172 A1),
`
`hereinafter Kawasaki, Vail et al. (US 20130291941 A1), hereinafter Vail, Cappel et al.
`
`("Oxygen-Induced Doping of Spiro-MeOTAD in Solid-State Dye-Sensitized Solar Cells
`
`and Its Impact on Device Performance" Nano Lett. 2012, 12, 4925—4931), hereinafter
`
`Cappel. Copies of Noh and Cappel were mailed February 22, 2018.
`
`Regarding claim 1, Noh teaches a perovskite solar cell (page 11843 left,
`
`paragraph 2 top).
`
`Noh teaches the structure FTO/bl-TiOz/mp-TiOz/CHsNHstls/spiro-OMeTAD/Au
`
`(page 11843 right, paragraph 1 bottom and 11884 figure 1a).
`
`Noh's FTO layer is the claimed first electrode.
`
`Noh's bl-Ti02 layer, a dense blocking layer of Ti02 (page 11843 left, Solar cell
`
`fabrication, top). A plain reading of Noh is that "blocking layer" means "hole-blocking
`
`layer;" thus Noh's bl-Ti02 layer is the claimed electron transport layer (ETL) located on
`
`the FTC layer, or first electrode. Ti02 is a wide band-gap semiconductor.
`
`Noh's CHsNHstls layer is the claimed light-absorbing layer; CHsNHstls is the
`
`claimed perovskite. CH3NH3+, Pb2t, and l' respectively are the claimed monovalent
`
`cation, divalent cation, and halogen anion. The CHsNHstls, or light absorbing layer, is
`
`located on the bl-Ti02 layer, or ETL.
`
`Noh's spiro-OMeTAD layer is the claimed hole transport layer (HTL) located on
`
`the CHsNHstls layer, or light-absorbing layer.
`
`Noh's Au layer is the claimed second electrode located on the spiro-OMeTAD, or
`
`HTL.
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`Page 4
`
`Claim 1 last paragraph requires that 0.1 mol % to 1.1 mol % of some material in
`
`the HTL be oxidized. Noh does not teach this feature. However, why this feature would
`
`have been obvious to one of ordinary skill in the art is explained in steps:
`
`Noh teaches that the concentration of oxidized spiro-OMeTAD, i.e., hole doping,
`
`plays a very important role in determining the charge transport resistance of spiro-
`
`OMeTAD and the final photovoltaic (PV) performance of solar cells (page 11845 left,
`
`paragraph 2). Noh's teaching shows that the concentration of oxidized spiro-OMeTAD
`
`is a result-effective parameter.
`
`Noh relates to a solid-state dye-sensitized solar cell (ssDSSC) (page 11842
`
`right). Like Noh, Kawasaki relates to a DSSC (paragraph 0205 top). Kawasaki teaches
`
`that hole doping the polymer used in the charge transport layer in order to increase its
`
`conductivity (paragraph 0193 top). On the other hand, Vail, which also relates to a
`
`ssDSSC (title), teaches that p-doping spiro-OMeTAD in order to increase conductivity
`
`can also increase charge recombination (paragraph 0011 bottom).
`
`In combination,
`
`Kawasaki and Vail provide reasons for optimizing the oxidation or hole-doping level of
`
`spiro-OMeTAD.
`
`Noh credits Cappel with teaching the importance of spiro-OMeTAD hole doping
`
`(page 11847 right, item 17). Like Noh, Cappel relates to a ssDSSC (title) and teaches
`
`spiro-OMeTAD placed Ti02 (page 4926 figure 2a). Cappel teaches a doping level of
`
`0.7 i 0.2 % oxidized spiro-OMeTAD (page 4927 Table 1 last line "after illumination").
`
`The range expressed by 0.7 i 0.2 % is 0.5 % to 0.9 %, which overlaps with the claimed
`
`range. Cappel's teaching show that a range of concentrations overlapping the claimed
`
`range was known when the instant application was filed.
`
`In the case where the claimed
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`Page 5
`
`ranges overlaps a range disclosed by the prior art a prima facie case of obviousness
`
`exists (MPEP 2144.05 | paragraph 1).
`
`Therefore, in order to control the charge transport resistance of Noh's spiro-
`
`OMeTAD HTL and determine the ultimate PV performance of Noh's solar cells while
`
`balancing the effects of increased conductivity and increased recombination, it would
`
`have been obvious to one of ordinary skill in the art to optimize the concentration of
`
`oxidized spiro-OMeTAD in the HTL layer and, in the course of routine experimentation,
`
`select a value within the claimed range.
`
`Regarding claim 2, Noh's perovskite comprises CH3NH3+ (title), which is a
`
`methylammonium cation.
`
`Regarding claim 3, Noh's perovskite comprises Pb2+ (title).
`
`Regarding claim 4 and claim 5, Noh's HTL comprises spiro-OMeTAD (page
`
`11844 figure 1a). As evidenced by Cappel, spiro-OMeTAD comprises the claimed
`
`aromatic amine derivative (page 4925 left, figure 1a, reproduced below). Two of the
`
`claimed aryl groups are connected to form a ring structure.
`
`
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`Page 6
`
`Regarding claim 6, Noh teaches a mesoporous Ti02 (mp-Ti02) film on the bl-
`
`Ti02 film, or ETL, between it and the perovskite light absorbing layer (page 11843 left,
`
`bottom — right, top). The mp-Ti02 is the claimed porous layer.
`
`Regarding claim 7, Noh teaches a Co(lll)-complex in the spiro-OMeTAD HTL
`
`(page 11843 right, paragraph 1 middle).
`
`Response to Arguments
`
`Applicant's arguments filed August 14, 2018 have been fully considered but they
`
`are not persuasive.
`
`Addressing the 103 rejection of claim 1, Applicant argues that Cappel fails to
`
`disclose the claimed ratio. The examiner respectfully disagrees. Cappel teaches a
`
`doping level of 0.7 i 0.2 % oxidized spiro-OMeTAD (page 4927 Table 1 last line "after
`
`illumination"). The range expressed by 0.7 i 0.2 % is 0.5 % to 0.9 %, which overlaps
`
`with the claimed range. Cappel's teaching show that a range of concentrations
`
`overlapping the claimed range was known when the instant application was filed.
`
`In the
`
`case where the claimed ranges overlaps a range disclosed by the prior art a prima facie
`
`case of obviousness exists (MPEP 2144.05 | paragraph 1).
`
`Still addressing the 103 rejection of claim 1, Applicant appears to argue that one
`
`looking to optimize the doping in know would not have selected a doping ratio different
`
`from that which Cappel discloses. The examiner respectfully disagrees. Kawasaki
`
`provides a rationale for increasing the doping ratio:
`
`to increase conductivity. Vail, on
`
`the other hand, provides a rationale for decreasing the doping ratio:
`
`to prevent charge
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`Page 7
`
`recombination. Therefore, depending on the priorities established by the needs of the
`
`application, it would have been obvious to one of ordinary skill in the art to choose a
`
`doping ratio greater or smaller than what Cappel discloses.
`
`While Applicant to date has not argued that the claimed range produces new or
`
`unexpected results, for the sake of compact prosecution, the examiner notes that since
`
`the range of 0.1 to 0.5 currently recited by claim 1
`
`is a subset of an originally claimed
`
`range of 0.1 to 1.1, the currently claimed range cannot be critical to the invention.
`
`Furthermore, when the data provided by Applicant's Table 1, filed in the specification
`
`and reproduced in the Remarks mailed August 14, 2018, are plotted in graphs, the data
`
`produce almost linear trends, which suggest that the results are predictable:
`
`Initial conversion efficiency (%) vs doping ratio
`
`
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`Page 8
`
`Efficency after heating (%) vs doping ratio
`
`
`
`Since progressively narrowing the claimed range appears unlikely to lead to
`
`allowance, the examiner respectfully and cordially encourages Applicant to request an
`
`interview before filing a response. We could use the interview to clarify the inventive
`
`concept and develop ideas for how to distinguish the claimed invention from the prior art
`
`of record.
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`Page 9
`
`Conclusion
`
`Any inquiry concerning this communication or earlier communications from the
`
`examiner should be directed to Magali P Slawski whose telephone number is (571)270-
`
`3960. The examiner can normally be reached on Monday - Friday 9 am. - 5 pm. EST.
`
`Examiner interviews are available via telephone, in-person, and video
`
`conferencing using a USPTO supplied web-based collaboration tool. To schedule an
`
`interview, applicant is encouraged to use the USPTO Automated Interview Request
`
`(AIR) at http://www.uspto.gov/interviewpractice before filing a response.
`
`If attempts to reach the examiner by telephone are unsuccessful, the examiner’s
`
`supervisor, Jennifer K. Michener can be reached on (571) 272-1424. The fax phone
`
`number for the organization where this application or proceeding is assigned is 571 -
`
`273-8300.
`
`Information regarding the status of an application may be obtained from the
`
`Patent Application Information Retrieval (PAIR) system. Status information for
`
`published applications may be obtained from either Private PAIR or Public PAIR.
`
`Status information for unpublished applications is available through Private PAIR only.
`
`For more information about the PAIR system, see http://pair-direct.uspto.gov. Should
`
`you have questions on access to the Private PAIR system, contact the Electronic
`
`Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a
`
`USPTO Customer Service Representative or access to the automated information
`
`system, call 800-786-9199 (IN USA OR CANADA) or 571-272—1000.
`
`

`

`Application/Control Number: 15/163,675
`Art Unit: 1721
`
`/Maga|i P Slawski/
`Primary Examiner, Art Unit 1721
`
`Page 10
`
`

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