www.uspto.gov
`
`UNITED STATES DEPARTMENT OF COMMERCE
`United States Patent and Trademark Office
`Address: COMMISSIONER FOR PATENTS
`P.O. Box 1450
`Alexandria, Virginia 2231371450
`
`15/657,987
`
`07/24/2017
`
`Kenta Matsuyama
`
`P170773U500
`
`9909
`
`38834
`
`759°
`
`05/28/2019
`
`WESTERMAN, HATTORI, DANIELS & ADRIAN, LLP
`
`8500 Leesburg Pike
`SUITE 7500
`
`GOLDEN” ANDREW J
`
`1726
`
`NOTIFICATION DATE
`
`DELIVERY MODE
`
`05/28/2019
`
`ELECTRONIC
`
`Please find below and/or attached an Office communication concerning this application or proceeding.
`
`The time period for reply, if any, is set in the attached communication.
`
`Notice of the Office communication was sent electronically on above—indicated "Notification Date" to the
`
`following e—mail address(es):
`
`patentmail@ whda.eom
`
`PTOL-90A (Rev. 04/07)
`
`

`

`0/7709 A0170” Summary
`
`Application No.
`15/657,987
`Examiner
`ANDREW J GOLDEN
`
`Applicant(s)
`Matsuyama, Kenta
`Art Unit
`AIA (FITF) Status
`1726
`Yes
`
`- The MAILING DA TE of this communication appears on the cover sheet wit/7 the correspondence address -
`Period for Reply
`
`A SHORTENED STATUTORY PERIOD FOR REPLY IS SET TO EXPIRE g MONTHS FROM THE MAILING
`DATE OF THIS COMMUNICATION.
`Extensions of time may be available under the provisions of 37 CFR 1.136(a). In no event, however, may a reply be timely filed after SIX (6) MONTHS from the mailing
`date of this communication.
`|f NO period for reply is specified above, the maximum statutory period will apply and will expire SIX (6) MONTHS from the mailing date of this communication.
`-
`- Failure to reply within the set or extended period for reply will, by statute, cause the application to become ABANDONED (35 U.S.C. § 133).
`Any reply received by the Office later than three months after the mailing date of this communication, even if timely filed, may reduce any earned patent term
`adjustment. See 37 CFR 1.704(b).
`
`Status
`
`1). Responsive to communication(s) filed on 07 January 2019.
`[:1 A declaration(s)/affidavit(s) under 37 CFR 1.130(b) was/were filed on
`
`2a)D This action is FINAL.
`
`2b)
`
`This action is non-final.
`
`3)[:] An election was made by the applicant in response to a restriction requirement set forth during the interview on
`; the restriction requirement and election have been incorporated into this action.
`
`4)[:] Since this application is in condition for allowance except for formal matters, prosecution as to the merits is
`closed in accordance with the practice under Expat/7e Quay/e, 1935 CD. 11, 453 O.G. 213.
`
`Disposition of Claims*
`5)
`Claim(s)
`
`1—2,5—6,9—10,13 and 18 is/are pending in the application.
`
`5a) Of the above claim(s)
`
`is/are withdrawn from consideration.
`
`E] Claim(s)
`
`is/are allowed.
`
`Claim(s) 1—2,5—6,9—10,13 and 18 is/are rejected.
`
`[:1 Claim(s)
`
`is/are objected to.
`
`) ) ) )
`
`6 7
`
`8
`
`
`
`are subject to restriction and/or election requirement
`[j Claim(s)
`9
`* If any claims have been determined aflowabie. you may be eligible to benefit from the Patent Prosecution Highway program at a
`
`participating intellectual property office for the corresponding application. For more information, please see
`
`http://www.uspto.gov/patents/init events/pph/index.jsp or send an inquiry to PPeredback@uspto.gov.
`
`Application Papers
`10)[:] The specification is objected to by the Examiner.
`
`11)[:] The drawing(s) filed on
`
`is/are: a)D accepted or b)l:] objected to by the Examiner.
`
`Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CFR 1.85(a).
`Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CFR 1.121 (d).
`
`Priority under 35 U.S.C. § 119
`12):] Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)-(d) or (f).
`Certified copies:
`
`a)D All
`
`b)I:J Some**
`
`c)C] None of the:
`
`1.[:] Certified copies of the priority documents have been received.
`
`2.[:] Certified copies of the priority documents have been received in Application No.
`
`3.[:] Copies of the certified copies of the priority documents have been received in this National Stage
`application from the International Bureau (PCT Rule 17.2(a)).
`
`** See the attached detailed Office action for a list of the certified copies not received.
`
`Attachment(s)
`
`1)
`
`Notice of References Cited (PTO-892)
`
`Information Disclosure Statement(s) (PTO/SB/08a and/or PTO/SB/08b)
`2)
`Paper No(s)/Mail Date_
`U.S. Patent and Trademark Office
`
`3) C] Interview Summary (PTO-413)
`Paper No(s)/Mail Date
`4) CI Other-
`
`PTOL-326 (Rev. 11-13)
`
`Office Action Summary
`
`Part of Paper No./Mai| Date 20190521
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 2
`
`DETAILED ACTION
`
`Notice of Pre-AIA or AIA Status
`
`1.
`
`The present application, filed on or after March 16, 2013,
`
`is being examined
`
`under the first inventor to file provisions of the AIA.
`
`Continued Examination Under 37 CFR 1. 114
`
`2.
`
`A request for continued examination under 37 CFR 1.114, including the fee set
`
`forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this
`
`application is eligible for continued examination under 37 CFR 1.114, and the fee set
`
`forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action
`
`has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 07
`
`January 2019 has been entered.
`
`Status of Claims
`
`3.
`
`Claims 1-2, 5-6, 9-10, 13 and 18 are presently under consideration. Claims 3-4,
`
`7-8, 11-12, and 14-17 are cancelled.
`
`4.
`
`Applicant’s amendments to the claims appear to have support in the paragraphs
`
`bridging pages 10-11 of the originally filed specification and have overcome the prior art
`
`rejection of record of pending claims 1-2, 5-6, 9-10 and 13.
`
`5.
`
`However, upon performing an updated search and consideration of the amended
`
`claims, new art was discovered and a new prior art rejection is set forth below.
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 3
`
`Applicant’s arguments where still applicable to the references used are addressed
`
`below.
`
`Claim Rejections - 35 USC § 112
`
`6.
`
`The following is a quotation of 35 U.S.C. 112(b):
`(b) CONCLUSION—The specification shall concludewith one or more claims particularly
`pointing out and distinctlyclaiming the subject matterwhich the inventoror a joint inventor
`regards as the invention.
`
`The following is aquotation of 35 U.S.C. 112 (pre-AIA), second paragraph:
`The specificationshall conclude with one or more claims particulariypointing outand distinctly
`claiming thesubjectmatterwhich the applicant regards as his invention.
`
`7.
`
`Claims 2, 6 and 10 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-
`
`AIA), second paragraph, as being indefinite for failing to particularly point out and
`
`distinctly claim the subject matter which the inventor or ajoint inventor, or for pre-AIA
`
`the applicant regards as the invention.
`
`Claim 2 recites the limitation "the first n-type highly doped region" in lines 2-3.
`
`There is insufficient antecedent basis for this limitation in the claim and claim 2 and its
`
`dependents 6 and 10 are thus rendered indefinite. For the purposes of examination,
`
`“the first n-type highly doped region” in claim 2 will be interpreted as referring to the n-
`
`type highly doped region of claim 1.
`
`Claim Rejections - 35 USC § 103
`
`8.
`
`In the event the determination of the status of the application as subject to AIA 35
`
`U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any
`
`correction of the statutory basis for the rejection will not be considered a new ground of
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 4
`
`rejection if the prior art relied upon, and the rationale supporting the rejection, would be
`
`the same under either status.
`
`9.
`
`The following is a quotation of 35 U.S.C. 103 which forms the basis for all
`
`obviousness rejections set forth in this Office action:
`
`A patent for a claimed invention maynotbe obtained, notwithstanding that the claimed
`invention is not identicallydisclosed as set forth in section 102, if the differences between the
`claimed invention and the priorartare such that the claimed invention as awhole would have
`been obvious before the effective filing date of the claimed i nvention to a person having
`ordinaryskill in the art to which the claimed invention pertains. Patentabilityshall notbe
`negated by the manner in which the invention was made.
`
`10.
`
`The factual inquiries set forth in Graham v. John Deere Co., 383 U.S. 1, 148
`
`USPQ 459 (1966), that are applied for establishing a background for determining
`
`obviousness under 35 U.S.C. 103 are summarized as follows:
`
`1. Determining the scope and contents of the prior art.
`
`2. Ascertaining the differences between the prior art and the claims at issue.
`
`3. Resolving the level of ordinary skill in the pertinent art.
`
`4. Considering objective evidence present in the application indicating
`
`obviousness or nonobviousness.
`
`11.
`
`Claims 1, 5, 9 and 18 are rejected under 35 U.S.C. 103 as being unpatentable
`
`over Adachi et al (US 2015/0075601) in further view of Kimoto et al (WO 2015/060437
`
`with reference made to US 2016/0268459 as the equivalent English translation).
`
`Regarding claim 1 Adachi discloses a solar cell, comprising:
`
`an n-type crystalline silicon substrate having atexture provided on a principal
`
`surface thereof ([0050], [0053]-[0054] Figs. 2—3 see: crystalline silicon substrate1 of the
`
`first conductivity type (n-type) with a texture provided on the back surface);
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 5
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`an i-type amorphous silicon layer located on the principal surface of the
`
`crystalline silicon substrate ([0057], [0068], [0073], Figs. 2-3 and 4B1-4B2 see: i-type
`
`amorphous silicon thin film 2a wrapping around onto the back surface of the substrate
`
`1); and
`
`a p-type amorphous silicon layer located on the i-type amorphous silicon layer
`
`([0057], [0068], [0073] Figs. 2-3 and 4B1-4B2 see: p-type amorphous silicon thin film 3a
`
`wrapping around onto the back surface of the substrate 1 over film 2a).
`
`Adachi does not explicitly disclose wherein the crystalline silicon substrate has
`
`an n-type highly-doped region having an n-type dopant the n-type highly-doped region
`
`is located between the i-type amorphous silicon layer and the crystalline silicon
`
`substrate, and the n-type highly-doped region has a higher dopant concentration than a
`
`dopant concentration in a central part in the thickness direction of the crystalline silicon
`
`substrate.
`
`Kimoto teaches a solar cell having an n-type crystalline silicon substrate with a
`
`highly-doped region, on the back surface (Kimoto, [0216]-[0219],
`
`[0222], [0166] Fig. 20
`
`see: n-type diffusion layer 90n), and the n-type highly-doped region has a higher dopant
`
`concentration than a dopant concentration in a central part in the thickness direction of
`
`the crystalline silicon substrate (Kimoto, [0216]-[0219], [0222] [0166] Fig. 20 see: n-type
`
`diffusion layer 90n is diffused into n-type substrate 82 and thus has a higher cumulative
`
`concentration of n-type dopants than a central portion of the n-type substrate 82 in a
`
`thickness direction). Kimoto teaches this highly-doped region functions as afront(back)
`
`surface field for the silicon substrate (Kimoto, [0270]).
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 6
`
`Adachi and Kimoto are combinable as they are both concerned with the field of
`
`heterojunction solar cells.
`
`It would have been obvious to one having ordinary skill in the art at the time of
`
`the invention to modify the solar cell of Adachi in view of Kimoto such that the crystalline
`
`silicon substrate of Adachi has an n-type highly-doped region having an n-type dopant
`
`as taught by Kimoto (Kimoto, [0216]-[0219], [0222], [0166] Fig. 20 see: n-type diffusion
`
`layer 90n) on the principal (back) surface of Adachi and the n-type highly-doped region
`
`has a higher dopant concentration than a dopant concentration in a central part in the
`
`thickness direction of the crystalline silicon substrate as taught by Kimoto (Kimoto,
`
`[0216]-[0219],
`
`[0222] [0166] Fig. 20 see: n-type diffusion layer 90n is diffused into n-type
`
`substrate 82 and thus has a higher cumulative concentration of n-type dopants than a
`
`central portion of the n-type substrate 82 in a thickness direction) so that the highly-
`
`doped region functions as a back surface field for the silicon substrate of Adachi as
`
`taught by Kimoto (Kimoto, [0270]).
`
`Regarding the limitation “the n-type highly-doped region is located between the i-
`
`type amorphous silicon layer and the crystalline silicon substrate”, Kimoto teaches the
`
`n-type highly-doped region 90n is formed over the entire surface of the silicon substrate
`
`(Kimoto, [0198]) and is thus between the portion of the i-type amorphous silicon layer
`
`wrapping around to the back surface of the crystalline silicon substrate and the back
`
`surface of the crystalline silicon substrate in modified Adachi.
`
`Regarding claim 5 modified Adachi discloses the solar cell according to claim 1,
`
`and Kimoto teaches wherein the principal surface can be provided on a light incident
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 7
`
`surface side, and the n-type highly-doped region is provided on the light incident surface
`
`side of the crystalline silicon substrate (Kimoto, [0216]-[0219],
`
`[0202], [0222], [0166] Fig.
`
`20 see: n-type diffusion layer 90n diffused into rear surface side of n-type substrate 82
`
`which can also be a light incident side).
`
`Regarding claim 9 modified Adachi discloses the solar cell according to claim 1
`
`and Adachi teaches wherein the principal surface is on a rear surface side ([0050],
`
`[0053]-[0054] Figs. 2-3 see: crystalline silicon substrate 1 of the first conductivity type
`
`(n-type) with a texture provided on the back surface with n-type a-Si film 3b), and
`
`Kimoto teaches the n-type highly-doped region is provided on the rear surface side of
`
`the crystalline silicon substrate (Kimoto, [0216]-[0219], [0222] [0166] Fig. 20 see: n-type
`
`diffusion layer 90n is diffused into back surface of n-type substrate 82).
`
`Regarding claim 18 modified Adachi discloses the solar cell according to claim 1,
`
`and Adachi further discloses wherein the crystalline silicon substrate has another
`
`principal surface opposite to the principal surface ([0050], [0053]-[0054] Figs. 2-3 see:
`
`front surface of crystalline silicon substrate 1), and comprises another i-type amorphous
`
`silicon layer located on the other principal surface of the crystalline silicon substrate,
`
`and an n-type amorphous silicon layer located on the other i-type amorphous silicon
`
`layer ([0057], [0068], [0073] Figs. 2-3 and 481-482 see: i-type amorphous silicon thin
`
`film 2b and n-type amorphous silicon thin film 3b wrapping around onto the front surface
`
`of the substrate 1).
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 8
`
`12.
`
`Claims 2, 6 and 10 are rejected under 35 U.S.C. 103 as being unpatentable over
`
`Adachi et al (US 2015/0075601) in view of Kimoto et al (WO 2015/060437 with
`
`reference made to US 2016/0268459 as the equivalent English translation) as applied
`
`to claims 1, 5, 9 and 18 above and in further view of Nakai et al (US 6,207,890) and
`
`further in view of Kim et al (US 2009/0286347).
`
`Regarding claim 2 modified Adachi discloses the solar cell according to claim 1,
`
`but does not explicitly disclose wherein the texture has a larger radius of curvature of a
`
`root part thereof than a radius of curvature of a peak part thereof or wherein the first n-
`
`type highly doped region has a larger thickness of the root part of the texture than a
`
`thickness of the peak part thereof.
`
`Nakai teaches a solar cell having a silicon substrate with one or more textured
`
`surfaces where in the texture surfaces the texture has a larger radius of curvature of a
`
`root part thereof than a radius of curvature of a peak part thereof (Nakai, C2/L55-56,
`
`C5/L4-25, Figs. 1-2 and 6-8 see: the bottom ‘b’ of the uneven sections of the n-type
`
`silicon substrate 1 are formed so as to have a curved surface of a larger curvature than
`
`that of the top of the protruded section). Nakai teaches this allows the deposited
`
`amorphous layers over the crystalline substrate to have a uniform thickness as
`
`amorphous layers having a non-uniform thickness can cause degraded output
`
`characteristics of the solar cell (Nakai, C2/L1-25, C5/L15-25).
`
`Nakai and modified Adachi are combinable as they are both concerned with the
`
`field of heterojunction solar cells.
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 9
`
`It would have been obvious to one having ordinary skill in the art at the time of
`
`the invention to modify the solar cell of modified Adachi in view of Nakai such that the
`
`texture surfaces of the substrate of modified Adachi have a larger radius of curvature of
`
`a root part thereof than a radius of curvature of a peak part thereof as taught by Nakai
`
`(Nakai, C2/L55-56, CS/L4-25, Figs. 1-2 and 6-8 see: the bottom ‘b’ of the uneven
`
`sections of the n-type silicon substrate 1 are formed so as to have a curved surface of a
`
`larger curvature than that of the top of the protruded section) because Nakai teaches
`
`this allows the deposited amorphous layers over the crystalline substrate to have a
`
`uniform thickness as amorphous layers having a non-uniform thickness can cause
`
`degraded output characteristics of the solar cell (Nakai, 02/L1-25, CS/L15-25).
`
`Kim teaches the thickness of a diffused first conduction-type highly doped region
`
`(Kim, [0069]—[0070] Figs. 10A—1OB and 11 see: boundary layer 1113 of second
`
`conductivity type (N-type) dopants) can be increased for the purposes of reducing
`
`electron-hole recombination and thus increase solar cell efficiency (Kim, [0069]—[0070]).
`
`Kim and modified Adachi are combinable as they are both concerned with the
`
`field of heterojunction solar cells.
`
`It would have been obvious to one having ordinary skill in the art at the time of
`
`the invention to modify the solar cell of modified Adachi in view of Kim to increase the
`
`thickness of the first n-type highly doped region such that it has a larger thickness of the
`
`root part of the texture than a thickness of the peak part thereof as Kim teaches
`
`increasing the thickness of such highly doped regions can reduce electron-hole
`
`recombination and thus increase solar cell efficiency (Kim, [0069]—[0070]).
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 10
`
`Regarding claim 6 modified Adachi discloses the solar cell according to claim 2,
`
`and Kimoto teaches wherein the principal surface can be provided on a light incident
`
`surface side, and the n-type highly-doped region is provided on the light incident surface
`
`side of the crystalline silicon substrate (Kimoto, [0216]-[0219],
`
`[0202], [0222], [0166] Fig.
`
`20 see: n-type diffusion layer 90n diffused into rear surface side of n-type substrate 82
`
`which can also be a light incident side).
`
`Regarding claim 10 modified Adachi discloses the solar cell according to claim 2
`
`and Adachi teaches wherein the principal surface is on a rear surface side ([0050],
`
`[0053]-[0054] Figs. 2-3 see: crystalline silicon substrate 1 of the first conductivity type
`
`(n-type) with a texture provided on the back surface with n-type a-Si film 3b), and
`
`Kimoto teaches the n-type highly-doped region is provided on the rear surface side of
`
`the crystalline silicon substrate (Kimoto, [0216]-[0219], [0222] [0166] Fig. 20 see: n-type
`
`diffusion layer 90n is diffused into back surface of n-type substrate 82).
`
`13.
`
`Claim 13 is rejected under 35 U.S.C. 103 as being unpatentable over Oh et al
`
`(US 2010/0154869),
`
`in View of Nakai et al (US 6,207,890) and further in view of
`
`Korevaar et al (US 2008/0173347).
`
`Regarding claim 13 Oh discloses a method for manufacturing a solar cell,
`
`comprising:
`
`a first step of forming a texture on a principal surface of an n-type crystalline
`
`silicon substrate (Oh, [0076]-[0079] Figs. 8 and 10-13 see: crystalline silicon substrate
`
`100 having an n-type impurity and a texture formed on the back surface);
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 11
`
`a third step of forming an i-type amorphous silicon layer (Oh, [0076]—[0079],
`
`[0053] Fig. 8 see: first non-single crystalline semiconductor layer 200 formed of i-type a-
`
`Si) and a p-type amorphous silicon layer (Oh, [0076]-[0079],
`
`[0053] Fig. 8 see: first
`
`conductive non-single crystalline semiconductor layer 300 formed of p-type a-Si), in this
`
`order on the principal surface of the crystalline silicon substrate having the texture
`
`formed thereon.
`
`Oh does not explicitly disclose wherein in the first step the texture has a larger
`
`radius of curvature of a root part thereof than a radius of curvature of a peak part
`
`thereof; and a second step of diffusing an n-type dopant on the principal surface of the
`
`silicon substrate having the texture formed thereon so that the principal surface has a
`
`higher n-type dopant concentration than an n-type dopant concentration in a central part
`
`in the thickness direction of the crystalline silicon substrate.
`
`Nakai teaches a solar cell having a silicon substrate with one or more textured
`
`surfaces where in the texture surfaces the texture has a larger radius of curvature of a
`
`root part thereof than a radius of curvature of a peak part thereof (Nakai, C2/L55-56,
`
`C5/L4-25, Figs. 1-2 and 6-8 see: the bottom ‘b’ of the uneven sections of the n-type
`
`silicon substrate 1 are formed so as to have a curved surface of a larger curvature than
`
`that of the top of the protruded section). Nakai teaches this allows the deposited
`
`amorphous layers over the crystalline substrate to have a uniform thickness as
`
`amorphous layers having a non-uniform thickness can cause degraded output
`
`characteristics of the solar cell (Nakai, C2/L1-25, C5/L15-25).
`
`Nakai and Oh are combinable as they are both concerned with the field of
`
`heterojunction solar cell manufacture.
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 12
`
`It would have been obvious to one having ordinary skill in the art at the time of
`
`the invention to modify the solar cell manufacturing method of Oh in view of Nakai such
`
`that the texture surfaces of the substrate of Oh have a larger radius of curvature of a
`
`root part thereof than a radius of curvature of a peak part thereof as taught by Nakai
`
`(Nakai, C2/L55-56, C5/L4-25, Figs. 1-2 and 6-8 see: the bottom ‘b’ of the uneven
`
`sections of the n-type silicon substrate 1 are formed so as to have a curved surface of a
`
`larger curvature than that of the top of the protruded section) because Nakai teaches
`
`this allows the deposited amorphous layers over the crystalline substrate to have a
`
`uniform thickness as amorphous layers having a non-uniform thickness can cause
`
`degraded output characteristics of the solar cell (Nakai, C2/L1-25, C5/L15-25).
`
`Furthermore, Korevaar discloses a method of making a solar cell having a
`
`crystalline substrate having an n-type doping (Korevaar, [0046], Fig. 5 see: c-Si
`
`substrate 120 which can have an n-type dopant) and includes an n-type highly-doped
`
`region having an n-type dopant, on a back surface which can be textured and the n-type
`
`highly-doped region has a higher dopant concentration than an n-type dopant
`
`concentration in a central part in the thickness direction of the crystalline silicon
`
`substrate (Korevaar, [0046], [0067], [0077]-[0079] Figs. 5 and 8 see: c-Si substrate 120
`
`which can have an n-type dopant and a further diffused n-type dopant of a higher
`
`concentration forming a back surface interface 520 at a back surface 128 which can be
`
`textured). Korevaar teaches this higher dopant concentration acts to reflect/repel charge
`
`carriers of the other type and attract the other charge carrier to prevent premature
`
`recombination (Korevaar, [0046], [0067]-[0068]).
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 13
`
`Modified Oh and Korevaar are combinable as they are both concerned with the
`
`field of heterojunction solar cell manufacturing methods.
`
`It would have been obvious to one having ordinary skill in the art at the time of
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`the invention to modify the solar cell manufacturing method of Oh in view of Korevaar
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`such that the method of Oh further comprises a second step of diffusing an n-type
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`dopant on the principal surface of the silicon substrate having the texture formed
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`thereon so that the principal surface has a higher n-type dopant concentration than an
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`n-type dopant concentration in a central part in the thickness direction of the crystalline
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`silicon substrate (Korevaar, [0046], [0067], [0077]-[0079] Figs. 5 and 8 see: c-Si
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`substrate 120 which can have an n-type dopant and a further diffused n-type dopant of
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`a higher concentration forming a back surface interface 520 at a back surface 128
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`which can be textured) because Korevaar teaches this higher dopant concentration acts
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`to reflect/repel charge carriers of the other type and attract the other charge carrier to
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`prevent premature recombination (Korevaar, [0046], [0067]-[0068]).
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`Response to Arguments
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`14.
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`Applicant’s arguments with respect to claims 1-2, 5-6, 9-10 and 18 have been
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`considered but are moot because the arguments do not apply to any of the references
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`being used in the current rejection.
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`15.
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`Applicant's arguments filed 17 January 2019 directed to claim 13 and the prior art
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`of Oh in view of Nakai and Korevaar have been fully considered but they are not
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`persuasive.
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`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 14
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`Applicant argues regarding claim 13 on pages 9-11 of the response that the prior
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`art of Oh in view of Nakai and Korevaar does not teach the limitations:
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`"the crystalline silicon substrate having an n-type highly- doped region having a n n-type dopant,
`a nd the n-type highly-doped region is located between the i-type a morphous silicon layer a nd the
`crystalline silicon substrate, and n-type highly-doped region has a higher dopantconcentration than a
`dopa nt concentration in a central part i n the thickness direction ofthe crystalline silicon substrate."
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`In response to applicant's argument that the references fail to show certain
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`features of applicant’s invention,
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`it is noted that the features upon which applicant relies
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`(i.e., "the n-type highly-doped region is located between the i-typeamorphous silicon layerandthe crystalline
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`silicon substrate”) are not recited in the rejected claim 13. Although the claims are
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`interpreted in light of the specification, limitations from the specification are not read into
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`the claims. See In re Van Geuns, 988 F.2d 1181, 26 USPOZd 1057 (Fed. Cir. 1993).
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`Applicant further argues regarding Korevaar that:
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`"...the rejection relies upon Korevaar as tea ching a c-Si substrate 120 which can have a n n-type
`dopa nt a nd includes a n n-type highly-doped region having an n-type dopant, on a surface, a nd the n-type
`highly-doped region has a higherdopant concentration than a dopantconcentration in a central partin
`the thickness direction of the crystalline silicon substrate, per pa ragraphs [0046], [0067] a nd Fig 5
`thereof.
`
`The rejection asserts thattheskilled artisan would utilize this aspect of Korevaarin modified Oh
`beca use Korevaarteaches this higher dopant concentration acts to reflect/repel charge carriers ofthe
`other type a nd attract the other cha rge carrierto prevent premature recombination.
`In response thereto, a pplicant respectfully notes that Korevaar discloses a structure having a n n-
`type highly doped region (a fi rst interface 520) a nd a laminated layer (a-Si (i-p)graded layer 240)ofa n i-
`type a morphous silicon layer a nd a p-type a morphous silicon layer on a silicon substrate. However, the
`la mi nated layer (a-Si (i-p) graded layer 240) ofthe i-type a morphous silicon layer and the p-type
`a morphous silicon layer a nd the n-type highly doped region (a first i nterface 520) do not form a laminated
`structure. Accordingly, the structural disclosure of Korevaar (which would be required to be incorporated
`into modified Oh i n orderto obtain the a bove noted benefit of preventing premature recombination) is
`clea rlydistinct from the present invention which has a laminated structure ofthe n-type highly-doped
`regi on, the i- type a morphous silicon layer, a nd the p-type a morphous silicon layer."
`
`Applicant’s arguments have been fully considered but are not found persuasive.
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`Korevaar does not explicitly state that the (a—Si (i-p) graded layer must be incorporated
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`in order to achieve the effect of reflecting/repelling charge carriers. This effect is a result
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`of the higher dopant concentration in the diffused doped layer exceeding the dopant
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`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 15
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`concentration in the substrate (Korevaar, [0067]-[0068]). As such applicant’s argument
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`is not found persuasive, and applicant’s further arguments to the combination of
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`Korevaar are considered moot as they depend from the argument rebutted above.
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`Applicant’s further arguments and remarks are moot in view of the new grounds
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`of rejection presented above.
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`Conclusion
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`16.
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`The prior art made of record and not relied upon is considered pertinent to
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`applicant's disclosure:
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`Nagashima (US 2002/0011590) at Fig 10 and para [0061] has a silicon substrate
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`160 with highly doped layers 80, 50 of the same dopant type formed on both sides in
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`order to reduce recombination loss paras [0061], [0045].
`
`Heng et al (US 2011/0272012) at the embodiment of Fig. 4 teaches a
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`heterojunction solar cell where the silicon base layer 404 has graded doping throughout
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`its thickness and an intrinsic layer 406 in the middle thereof.
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`17.
`
`Any inquiry concerning this communication or earlier communications from the
`
`examiner should be directed to ANDREW J GOLDEN whose telephone number is
`
`(571)270-7935. The examiner can normally be reached on 11am-8pm.
`
`Examiner interviews are available via telephone, in-person, and video
`
`conferencing using a USPTO supplied web-based collaboration tool. To schedule an
`
`interview, applicant is encouraged to use the USPTO Automated Interview Request
`
`(AIR) at http://www.uspto.gov/interviewpractice.
`
`

`

`Application/Control Number: 15/657,987
`Art Unit: 1726
`
`Page 16
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`If attempts to reach the examiner by telephone are unsuccessful, the examiner’s
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`supervisor, Jeffrey Barton can be reached on 571-272—1307. The fax phone number for
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`the organization where this application or proceeding is assigned is 571-273-8300.
`
`Information regarding the status of an application may be obtained from the
`
`Patent Application Information Retrieval (PAIR) system. Status information for
`
`published applications may be obtained from either Private PAIR or Public PAIR.
`
`Status information for unpublished applications is available through Private PAIR only.
`
`For more information about the PAIR system, see http://pair-direct.uspto.gov. Should
`
`you have questions on access to the Private PAIR system, contact the Electronic
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`Business Center (EBC) at 866-217-9197 (toll-free).
`
`If you would like assistance from a
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`
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`
`ANDREW J. GOLDEN
`
`Primary Examiner
`Art Unit 1726
`
`/ANDREW J GOLDEN/
`
`Primary Examiner, Art Unit 1726
`
`