www.uspto.gov
`
`UNITED STATES DEPARTMENT OF COMMERCE
`United States Patent and TrademarkOffice
`Address; COMMISSIONER FOR PATENTS
`P.O. Box 1450
`Alexandria, Virginia 22313-1450
`
`16/101,788
`
`08/13/2018
`
`Kazunori Fujita
`
`P180775US00
`
`9271
`
`WESTERMAN, HATTORI, DANIELS & ADRIAN, LLP
`8500 LEESBURG PIKE
`SUITE 7500
`TYSONS, VA 22182
`
`KANG,TAE-SIK
`
`ART UNIT
`1726
`
`PAPER NUMBER
`
`NOTIFICATION DATE
`
`DELIVERY MODE
`
`03/09/2021
`
`ELECTRONIC
`
`Please find below and/or attached an Office communication concerning this application or proceeding.
`
`The time period for reply, if any, is set in the attached communication.
`
`Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the
`following e-mail address(es):
`
`patentmail @ whda.com
`
`PTOL-90A (Rev. 04/07)
`
`

`

`Office Action Summary
`
`Application No.
`16/101,788
`Examiner
`TAE-SIK KANG
`
`Applicant(s)
`Fujita et al.
`Art Unit
`1726
`
`AIA (FITF) Status
`Yes
`
`-- The MAILING DATEofthis communication appears on the cover sheet with the correspondence address --
`Period for Reply
`
`A SHORTENED STATUTORY PERIOD FOR REPLYIS SET TO EXPIRE 3 MONTHS FROM THE MAILING
`DATE OF THIS COMMUNICATION.
`Extensions of time may be available underthe provisions of 37 CFR 1.136(a). In no event, however, may a reply betimely filed after SIX (6) MONTHSfrom the mailing
`date of this communication.
`If NO period for reply is specified above, the maximum statutory period will apply and will expire SIX (6) MONTHSfrom the mailing date of this communication.
`-
`- Failure to reply within the set or extended period for reply will, by statute, cause the application to become ABANDONED (35 U.S.C. § 133}.
`Any reply received by the Office later than three months after the mailing date of this communication, evenif timely filed, may reduce any earned patent term
`adjustment. See 37 CFR 1.704(b).
`
`Status
`
`
`
`1) Responsive to communication(s) filed on 01/15/2021.
`C} A declaration(s)/affidavit(s) under 37 CFR 1.130(b) was/werefiled on
`
`2a)L) This action is FINAL. 2b)¥)This action is non-final.
`3)02 An election was madeby the applicant in responseto a restriction requirement set forth during the interview
`on
`; the restriction requirement and election have been incorporated into this action.
`4\0) Since this application is in condition for allowance except for formal matters, prosecution as to the merits is
`closed in accordance with the practice under Exparte Quayle, 1935 C.D. 11, 453 O.G. 213.
`
`Disposition of Claims*
`1-5,7-10 and 12-17 is/are pending in the application.
`)
`Claim(s)
`5a) Of the above claim(s) 14-17 is/are withdrawn from consideration.
`() Claim(s)__ is/are allowed.
`Claim(s) 1-5,7-10 and 12-13 is/are rejected.
`S)
`) © Claim(s)___is/are objected to.
`C] Claim(s
`are subjectto restriction and/or election requirement
`)
`S)
`* If any claims have been determined allowable, you maybeeligible to benefit from the Patent Prosecution Highway program at a
`participating intellectual property office for the corresponding application. For more information, please see
`http:/Awww.uspto.gov/patents/init_events/pph/index.jsp or send an inquiry to PPHfeedback@uspto.gov.
`
`) )
`
`Application Papers
`10) The specification is objected to by the Examiner.
`11)() The drawing(s) filedon__ is/are: a)C) accepted or b)C) objected to by the Examiner.
`Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CFR 1.85(a).
`Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CFR 1.121 (d).
`
`Priority under 35 U.S.C. § 119
`12). Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)-(d)or (f).
`Certified copies:
`cc) None ofthe:
`b)L) Some**
`a)D) All
`1.1) Certified copies of the priority documents have been received.
`2.1) Certified copies of the priority documents have been received in Application No.
`3.2.) Copies of the certified copies of the priority documents have been receivedin this National Stage
`application from the International Bureau (PCT Rule 17.2(a)).
`* See the attached detailed Office action for a list of the certified copies not received.
`
`Attachment(s)
`
`1)
`
`Notice of References Cited (PTO-892)
`
`2) (J Information Disclosure Statement(s) (PTO/SB/08a and/or PTO/SB/08b)
`Paper No(s)/Mail Date
`U.S. Patent and Trademark Office
`
`3) (J Interview Summary (PTO-413)
`Paper No(s)/Mail Date
`(Qj Other:
`
`4)
`
`PTOL-326 (Rev. 11-13)
`
`Office Action Summary
`
`Part of Paper No./Mail Date 20210304
`
`

`

`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 2
`
`DETAILED ACTION
`
`Examiner’s Notes
`
`1.
`
`The present application, filed on or after March 16, 2013, is being examined underthe
`
`first inventor to file provisions of the AIA.
`
`Continued Examination Under 37 CFR 1.114
`
`2.
`
`A requestfor continued examination under 37 CFR 1.114, including the fee setforth in
`
`37 CFR 1.17(e), wasfiled in this application after final rejection. Since this application is eligible
`
`for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.1 7(e) has
`
`been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37
`
`CFR 1.114. Applicant's submission filed on 01/15/2021 has been entered.
`
`Remarks
`
`Claims 1, 5, and 12 are amended.
`
`Claims 6 and 11 are cancelled.
`
`Claims 14-17 are withdrawn from further consideration.
`
`Claims 1-5, 7-10, and 12-17 are pending.
`
`3.
`
`4.
`
`5.
`
`6.
`
`Claim Rejections - 35 USC § 103
`
`7.
`
`The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness
`
`rejections set forth in this Office action:
`
`A patent for a claimed invention may not be obtained, notwithstanding that the
`claimed invention is not identically disclosed as set forth in section 102 of this
`title, if the differences between the claimed invention and the prior art are such
`
`

`

`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 3
`
`that the claimed invention as a whole would have been obvious before the
`effective filing date of the claimed invention to a person having ordinary skill in
`the art to which the claimed invention pertains. Patentability shall not be negated
`by the mannerin which the invention was made.
`
`8.
`
`The factual inquiries set forth in Graham v. John Deere Co., 383 U.S. 1, 148 USPQ 459
`
`(1966), that are applied for establishing a background for determining obviousness under 35
`
`U.S.C. 103 are summarized asfollows:
`
`PoON>
`
`Determining the scope and contents of the prior art.
`Ascertaining the differences between the prior art and the claims at issue.
`Resolving the level of ordinary skill in the pertinent art.
`Considering objective evidence presentin the application indicating obviousness
`or nonobviousness.
`
`This application currently namesjoint inventors. In considering patentability of the claims
`
`the examiner presumesthat the subject matter of the various claims was commonly owned as
`
`of the effectivefiling date of the claimed invention(s) absent any evidenceto the contrary.
`
`Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective
`
`filing dates of each claim that was not commonly ownedasofthe effectivefiling date of the later
`
`invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any
`
`potential 35 U.S.C. 102(a)(2) prior art against the later invention.
`
`9.
`
`Claims 1-3, 7-10, and 12 are rejected under 35 U.S.C. 103 as being unpatentable
`
`over KOBAYASHI (JP 2014216334 A, see English Machine Translation) in view of
`
`SCHULTZ (US 20120055547 A1) and JIN (KR 20130027301 A, see English Machine
`
`Translation) with evidence provided by CHANG (Growth of Hydrogenated
`
`Microcrystalline Silicon Thin Films Using Electron Cyclotron Resonance Chemical
`
`Deposition Method).
`
`Regarding claim 1, KOBAYASHI teachesa solarcell (see the photovoltaic device 10 in
`
`Fig. 1) comprising:
`
`e
`
`acrystalline silicon wafer (see the n-type crystal semiconductor substrate 11);
`
`

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`a first passivation layer (seethe first intrinsic amorphous semiconductor thin film 12; P5,
`
`The thicknessof the intrinsic amorphous semiconductor thin film 12 is not particularly
`
`limited, but can be, for example, 1 nm or more and 10 nm or less, and preferably 4 nm or
`
`less. When the film thicknessis less than 1 nm, recombination of carriersis likely to
`
`occur due to defects easily occurring; Based on the disclosure, the first intrinsic
`
`amorphous semiconductor thin film 12 has a capability of passivation) which is formed
`
`on a light receiving surface of the crystalline silicon wafer (see the top surface of the n-
`
`type crystal semiconductor substrate 11) (see Fig. 1);
`
`an n-type crystalline silicon layer (see the n-type microcrystalline silicon thin film 13; P6,
`
`The n-type amorphous semiconductor constituting the n-type amorphous semiconductor
`
`thin film 13 is not particularly limited as long as the photovoltaic element 10 can exhibit a
`
`predetermined external quantum efficiency. n-type microcrystalline semiconductor is
`
`preferred. Examples of the semiconductor constituting the n-type microcrystalline
`
`semiconductor includesilicon; It would have been obvious to one of the ordinary skill in
`
`the art before the effective filing date of the claimed invention to employ the n-type
`
`microcrystalline silicon semiconductor for the thin film 13 in the device of KOBAYASHI,
`
`because the selection of a known material based on its suitability for its intended use
`
`supports a prima facie obviousness determination (MPEP 2144)) which is formed on the
`
`first passivation layer (see the discussion above and Fig. 1);
`
`a first transparent conductive layer (see the first transparent conductive film 14) which is
`
`formed on the n-typecrystalline silicon layer (see Fig. 1) and which contains a metal
`
`oxide (P6, Examplesof the transparent electrode material constituting the first
`
`transparent conductivefilm 14 include indium tin oxide (ITO), tungsten-doped indium
`
`oxide (IWO));
`
`a first collector electrode (see the collector electrodes 18) which includes a plurality of
`
`thin linear finger sections formed on the first transparent conductive layer (see Fig. 1, P7
`
`

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`Art Unit: 1726
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`Page 5
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`The collector electrodes 18 and 19 include a plurality of bus bar electrodes formed in
`
`parallel to each other, and a plurality of finger electrodes formed orthogonal to these bus
`
`bar electrodes and in parallel with each other);
`
`e
`
`asecond passivation layer (see the second intrinsic amorphous semiconductor thin film
`
`15; P7, The thicknessof the p-type amorphous semiconductor thin film 16 is not
`
`particularly limited, but is preferably, for example, 1 nm to 20 nm, more preferably 3 nm
`
`to 10 nm, andstill more preferably 5 nm. By setting the film thickness within such a
`
`range, occurrenceof carrier recombination and series resistance can be reduced ina
`
`balanced manner; Based on the disclosure, the second intrinsic amorphous
`
`semiconductor thin film 15 has a capability of passivation) which is formed on a rear
`
`surface of the crystalline silicon wafer (see the bottom surface of the n-type crystal
`
`semiconductor substrate 11) (see Fig. 1); and
`
`e
`
`ap-type amorphous silicon layer (see the p-type amorphous silicon thin film 16; P7, The
`
`p-type amorphous semiconductor thin film 16 include SiC, SiGe, SiN, etc. in addition to
`
`p-type amorphous silicon, but silicon is preferable from the viewpoint of productivity; It
`
`would have been obvious to one ofthe ordinary skill in the art before the effectivefiling
`
`date of the claimed invention to employ the p-type amorphous silicon semiconductor for
`
`the thin film 16 in the device of KOBAYASHI, becausethe selection of a known material
`
`based on its suitability for its intended use supports a prima facie obviousness
`
`determination (MPEP 2144)) which is formed on the second passivation layer (see the
`
`discussion above and Fig. 1);
`
`e
`
`asecond transparent conductive layer (see the second transparent conductivefilm 17)
`
`whichis formed on the p-type amorphous silicon layer (see Fig. 1) and which contains a
`
`metal oxide (P7, The material and the film forming method for forming the second
`
`transparent conductive film 17 are the same asthosefor the first transparent conductive
`
`film 14 and see the discussion above); and
`
`

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`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 6
`
`e
`
`asecondcollector electrode (see the collector electrodes 19) which includes a plurality
`
`of thin linear finger sections formed on the second transparent conductive layer (see Fig.
`
`1, P7 The collector electrodes 18 and 19 include a plurality of bus bar electrodes formed
`
`in parallel to each other, and a plurality of finger electrodes formed orthogonal to these
`
`bus bar electrodes and in parallel with each other).
`
`Regarding the claimed “and which mainly contains silicon oxide” and “wherein the first
`
`passivation layer has a smaller thickness and a higher oxygen concentration than the second
`
`passivation layer’, KOBAYASHI discloses the thicknessofthe first intrinsic amorphous
`
`semiconductor thin film 12 is not particularly limited, but can be, for example, 1 nm or more and
`
`10 nm or less and the film thickness of the secondintrinsic amorphous semiconductor thin film
`
`15 can be, for example, 1 nm or more and 10 nm or less (P5-P7), and the firstintrinsic
`
`amorphous semiconductor thin film 12 and the second intrinsic amorphous semiconductor thin
`
`film 15 include silicon (Si), SiC, SiGe, SIN (P5-P7), but does not explicitly disclose the claimed
`
`feature. However, SCHULTZ disclosesa silicon solar cell, wherein the first electrically
`
`passivating interface layer 64 in Fig. 6 includessilicon oxide, silicon nitride, intrinsic amorphous
`
`silicon, intrinsic polycrystalline silicon, aluminum oxide, aluminum nitride, phosphorus nitride,
`
`titanium nitride [0057] and the second electrically passivating interface layer 66 in Fig. 6
`
`includessilicon oxide, silicon nitride, intrinsic amorphous silicon, intrinsic polycrystalline silicon,
`
`aluminum oxide, aluminum nitride, phosphorus nitride, titanium nitride [0059].
`
`It would have
`
`been obvious to one of the ordinary skill in the art before the effectivefiling date of the claimed
`
`invention to employthe silicon oxide material for the first intrinsic amorphous semiconductor thin
`
`film and the intrinsic amorphous silicon for the second intrinsic amorphous semiconductor thin
`
`film in the device of KOBAYASHI as taught by SCHULTZ, because the selection of a known
`
`material based on its suitability for its intended use supports a prima facie obviousness
`
`determination (MPEP 2144). Therefore, modified KOBAYASHI teachesthe first passivation
`
`layer mainly contains silicon oxide (see the discussion above), and the first passivation layer
`
`

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`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 7
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`has a smaller thickness and a higher oxygen concentration than the second passivation layer
`
`(The silicon oxide has a higher oxygen concentration than the amorphous silicon; Based on the
`
`disclosure of KOBAYASHI, it would have been obvious to choosethat “the first intrinsic
`
`amorphous semiconductor thin film 12 has a smaller thickness than the second intrinsic
`
`amorphous semiconductor thin film” from a finite numberof identified, predictable solutions (In
`
`the thickness between 1 nm and 10 nm, there are three identified and predictable solutions,
`
`‘smaller thickness’, ‘same thickness’, and ‘larger thickness’) for the thickness of the each of the
`
`intrinsic amorphous semiconductor thin films, with a reasonable expectation of success, See
`
`MPEP 2141 (Ill) Rationale E, KSR v.Teleflex (Supreme Court 2007).
`
`Further regarding the claimed “wherein the first collector electrode includes the finger
`
`sections in a number smaller than the finger sections included in the second collector
`
`electrode’, KOBAYASHI teachesthe first collector electrode includes the finger sections and the
`
`second collector electrode includes the finger sections, but does not explicitly disclose the
`
`claimed “in a number smaller than’. However, JIN discloses a solar cell, wherein the numberof
`
`rear finger lines 170 may be greater than the number offront finger lines 140 andif the number
`
`of the rear fingerlines 170 is larger than the number of the front finger lines 140, the total
`
`resistance of the solar cells 100 decreases as the distance of movement of electrons or holes to
`
`the rearfinger lines 170 becomesshorter can do, in addition, since it is not necessary to
`
`increase the numberofthe front finger lines 140 to reduce the resistance, the light absorption at
`
`the front surface of the solar cell 100 is not further disturbed and the light absorption rate of the
`
`solar cell 100 is reduced (PY).
`
`It would have been obvious to one of the ordinary skill in the art
`
`before the effective filing date of the claimed invention to modify the numberof the plurality of
`
`finger electrodes of the collector electrodes 18 and the numberofthe plurality of finger
`
`electrodes of the collector electrodes 19 so that the numberofthe plurality of finger electrodes
`
`of the collector electrodes 18 is smaller than the numberof the plurality of finger electrodes of
`
`the collector electrodes 19 in the device of KOBAYASHI as taught by JIN, becausethe total
`
`

`

`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 8
`
`resistance of the solar cells decreases as the distance of movement of electrons or holes to the
`
`rear finger electrodes becomesshorter can do, in addition, since it is not necessary to increase
`
`the numberof the front finger electrodes to reduce the resistance, the light absorption at the
`
`front surface of the solarcell is not further disturbed and the light absorption rate of the solar cell
`
`is reduced.
`
`Regarding claim 2, Applicant is directed abovefor a full discussion as applied to claim
`
`1.
`
`KOBAYASHI teaches the secondpassivation layer contains substantially intrinsic
`
`amorphous silicon or amorphous silicon that has a dopant concentration lower than that in the
`
`p-type amorphous silicon layer (see the rejection of claim 1, see the intrinsic amorphous silicon
`
`for the second intrinsic amorphous semiconductor thin film, which has a dopant concentration
`
`lower than that in the p-type amorphous silicon thin film).
`
`Regarding claim 3, Applicant is directed abovefor a full discussion as applied to claim
`
`Regarding the recitation “wherein a crystallization rate of the p-type amorphous silicon
`
`layer is lower than a crystallization rate of the n-type crystalline silicon layer, and the
`
`crystallization rate of the n-type crystalline silicon layer is lower than a crystallization rate of the
`
`crystalline silicon wafer’, the recitation is directed to the method of making a product and it is
`
`noted that said limitations are not given patentable weight in product claims. Even though a
`
`product-by-processis defined by the process steps by which the product is made, determination
`
`of patentability is based on the productitself and does not depend on its method of production.
`
`See MPEP 2113 Product-by-Process Claims [R-9]. See also /n re Thorpe, 777 F.2d 695, 227
`
`USPQ 964 (Fed. Cir. 1985). Examiner notesthat only the structure(s) necessarily present from
`
`the method is(are) given patentable weight.
`
`In the instant case, only the limitation(s) “film layer”
`
`is given patentable weight.
`
`

`

`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 9
`
`Regarding claim 7, Applicant is directed abovefor a full discussion as applied to claim
`
`1.
`
`Regarding the claimed “wherein the oxygen concentration in the first passivation layer is
`
`1.0 x 107' atoms/cm?or higher’, since modified KOBAYASHI meetsall the composition
`
`requirements of the claimed product (The claimed composition requires silicon oxide and
`
`modified KOBAYASHI teachessilicon oxide), the property regarding “wherein the oxygen
`
`concentration in the first passivation layer is 1.0 x 10°' atoms/cm? or higher” would obviously
`
`have been present in modified KOBAYASHI’s composition. “Where the claimed and prior art
`
`products are identical or substantially identical in structure or composition, or are produced by
`
`identical or substantially identical processes, a prima facie case of either anticipation or
`
`obviousnesshas been established.” In re Best, 562 F.2d 1252, 1255, 195 USPQ 430, 433
`
`(CCPA 1977). See MPEP 2112.
`
`Regarding claim 8, Applicant is directed abovefor a full discussion as applied to claim
`
`7.
`
`Modified KOBAYASHI teaches the n-typecrystalline silicon layer has a hydrogen
`
`concentration lower than that in the p-type amorphous silicon layer (KOBAYASHI discloses the
`
`n-type microcrystalline silicon thin film 13 and the p-type amorphous silicon thin film 16 grown
`
`by CVD method using H2, SiH4 gases and Evidence provided by CHANG discloses
`
`hydrogenated microcrystalline silicon (uc-Si:H) thin films grown by CVD method using H2, SiH4
`
`gases, wherein Fig. 2 showsthat the Si layer with the highercrystallinity shows the lower
`
`hydrogen content; Based on the disclosure, the n-type microcrystalline silicon thin film 13 has a
`
`hydrogen concentration lower than that in the p-type amorphous silicon thin film 16).
`
`

`

`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 10
`
`Regarding claim 9, Applicant is directed abovefor a full discussion as applied to claim
`
`8.
`
`Modified KOBAYASHI teaches the n-typecrystalline silicon layer has a hydrogen
`
`concentration lowerthan that in the second passivation layer (KOBAYASHI discloses the n-type
`
`microcrystalline silicon thin film 13 and the intrinsic amorphous silicon grown by CVD method
`
`using H2, SiH4 gases and Evidence provided by CHANG discloses hydrogenated
`
`microcrystalline silicon (uc-Si:H) thin films grown by CVD method using H2, SiH4 gases,
`
`wherein Fig. 2 showsthat the Si layer with the higher crystallinity shows the lower hydrogen
`
`content; Based on the disclosure, the n-type microcrystalline silicon thin film 13 has a hydrogen
`
`concentration lower than that in the intrinsic amorphous silicon).
`
`Regarding claim 10, Applicant is directed abovefor a full discussion as applied to claim
`
`Regarding the recitation “wherein an n-type dopant concentration in the first passivation
`
`layer is higher than a p-type dopant concentration in the second passivation layer’, the first
`
`intrinsic amorphous semiconductor thin film 12 does not contain any dopant itself but there
`
`would be a certain amountof n-type dopant near the n-type crystal semiconductor substrate 1 1
`
`because of the dopantdiffusion, however the second intrinsic amorphous semiconductor thin
`
`film 15 does not contain any p-type dopant, which meets the recitation.
`
`Regarding claim 12, Applicant is directed abovefor a full discussion as applied to claim
`
`1.
`
`Regarding the claimed “wherein a refractive index of the n-type crystalline silicon layer is
`
`equalto or greater than 2.5 times a refractive index of the first transparent conductive layer’,
`
`since KOBAYASHI meets all the composition requirements of the claimed product (see the
`
`rejections of claims 1 and 10; KOBAYASHI discloses the n-type microcrystalline silicon thin film
`
`13 grown by CVD andthe first transparent conductive film 14 including indium tin oxide (ITO),
`
`

`

`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 11
`
`tungsten-doped indium oxide (WO), Applicant’s claimed product requires the n-type crystalline
`
`silicon layer grown by CVD and the transparent conductive layers formed from a transparent
`
`conductive oxide (IWO, ITO, etc.)), KOBAYASHI’s composition is considered to inherently
`
`provide the same predictable property regarding “wherein a refractive index of the n-type
`
`crystalline silicon layer is equal to or greater than 2.5 times a refractive index of the first
`
`transparent conductive layer”, and the property regarding “wherein a refractive index of the n-
`
`type crystalline silicon layer is equal to or greater than 2.5 times a refractive index ofthe first
`
`transparent conductive layer” would obviously have been present in modified KOBAYASHI’s
`
`composition. “Where the claimed and prior art products are identical or substantially identical in
`
`structure or composition, or are produced byidentical or substantially identical processes, a
`
`prima facie case of either anticipation or obviousness has been established.” In re Best, 562
`
`F.2d 1252, 1255, 195 USPQ 430, 433 (CCPA 1977). See MPEP 2112.
`
`10.
`
`Claims 4-5 are rejected under 35 U.S.C. 103 as being unpatentable over
`
`KOBAYASHI (JP 2014216334 A, see English Machine Translation) in view of SCHULTZ
`
`(US 20120055547 A1) and JIN (KR 20130027301 A, see English Machine Translation) as
`
`applied to claim 1, further in view of YANG (US 20150357507 A1) and ZOUARI (Effect of
`
`the front surface field on crystalline silicon solar cell efficiency).
`
`Regarding claim 4, Applicant is directed abovefor a full discussion as applied to claim
`
`Regarding the claimed “Wherein the crystalline silicon wafer is an n-type crystalline
`
`silicon wafer, and has, at an interface in contact with the first passivation layer and a
`
`surrounding area of the interface of the crystalline silicon wafer in contact with the first
`
`passivation layer, an n* layer that is doped into an n type and that has a dopant concentration
`
`higher than that in a region other than the interface of the crystalline silicon wafer in contact with
`
`the first passivation layer and the surrounding area of the interface of the crystalline silicon
`
`

`

`Application/Control Number: 16/101,788
`Art Unit: 1726
`
`Page 12
`
`waferin contact with the first passivation layer’, KOBAYASHI teachesthe crystalline silicon
`
`waferis an n-type crystalline silicon wafer (see the n-type crystal semiconductor substrate 11),
`
`and at an interface in contact with the first passivation layer and a surrounding area of the
`
`interface of the crystalline silicon wafer in contact with the first passivation layer (see the
`
`rejection of claim 1 and Fig. 1), but does not explicitly disclose the claimed “an n* layerthatis
`
`doped into an n type and that has a dopant concentration higher than that in a region other than
`
`the interface of the crystalline silicon wafer in contact with the first passivation layer and the
`
`surrounding area of the interface of the crystalline silicon wafer in contact with the first
`
`passivation layer’. However, YANG disclosesa silicon solar cell, wherein the semiconductor
`
`substrate 10 mayinclude a front surface field region 130 at a front surface thereof and the front
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`surfacefield region 130 may have the same conductive type as that of the base region 110 and
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`a higher doping concentration than the base region 110 [0025], wherein the front surfacefield
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`region 130 may be formed as a portion of a single-crystalline semiconductor substrate [0026].
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`Additionally, ZOUARI discloses a crystalline silicon solar cell, wherein the most important role
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`played by the front surfacefield layer is to enhancethe collection of light-generated free
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`carriers, which improvesthe efficiency of the short wavelength quantum (see Abstract).
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`It would
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`have been obvious to one of the ordinary skill in the art before the effectivefiling date of the
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`claimed invention to employ the front surface field layer, as a portion of the n-type crystal
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`semiconductor substrate, having a higher n-type doping concentration than the n-type crystal
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`semiconductor substrate in the device of KOBAYASHI as taught by YANG and ZOUARI,
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`becausethe front surface field layer enhancesthe collection of light-generated free carriers,
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`which improvesthe efficiency of the short wavelength quantum. Therefore, modified
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`KOBAYASHI teachesthe crystalline silicon wafer is an n-type crystalline silicon wafer, and has,
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`at an interface in contact with the first passivation layer and a surrounding area thereof, an n*
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`layer that is doped into an n type and that has a dopant concentration higher than that in a
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`region otherthan the interface of the crystalline silicon wafer in contact with the first passivation
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`Application/Control Number: 16/101,788
`Art Unit: 1726
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`Page 13
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`layer and the surrounding area of the interface of the crystalline silicon wafer in contact with the
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`first passivation layer (see the discussion above, Fig. 1 of KOBAYASHI, the combination).
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`Regarding claim 5, Applicant is directed abovefor a full discussion as applied to claim
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`Modified KOBAYASHI teachesin the crystalline silicon wafer, an impurity concentration
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`in the interface in contact with the fist passivation layer and the surrounding area of the interface
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`of the crystalline silicon wafer in contact with the first passivation layer is higher than an impurity
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`concentration in an interface in contact with the second passivation layer and a surrounding
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`area of the interface of the crystalline silicon wafer in contact with the second passivation layer
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`(see the rejection of claim 4 and Fig. 1 of KOBAYASHI; Becauseofthe front surfacefield layer,
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`as a portion of the n-type crystal semiconductor substrate, having a higher n-type doping
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`concentration than the n-type crystal semiconductor substrate, the impurity concentration in the
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`interface in contact with the first intrinsic amorphous semiconductor thin film 12 and the
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`surrounding area thereof is higher than the impurity concentration in an interface in contact with
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`the second intrinsic amorphous semiconductor thin film 15 and a surrounding area thereof).
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`11.
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`Claim 13 is rejected under 35 U.S.C. 103 as being unpatentable over KOBAYASHI
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`(JP 2014216334 A, see English Machine Translation) in view of SCHULTZ (US
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`20120055547 A1) and JIN (KR 20130027301 A, see English Machine Translation) as
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`applied to claim 1, further in view of NAKASHIMA (US 20100006147 A1).
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`Regarding claim 13, Applicant is directed abovefor a full discussion as applied to claim
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`1.
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`Regarding the claimed “a protective layer which is formed on the n-type crystalline
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`silicon layer and which mainly contains an insulation material; a second transparent conductive
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`layer which is formed on the p-type amorphous silicon layer and which contains a metal oxide;
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`Application/Control Number: 16/101,788
`Art Unit: 1726
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`Page 14
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`and a collector electrode which is formed on the second transparent conductive layer”,
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`KOBAYASHI teaches a second transparent conductive layer (see the second transparent
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`conductive film 17) which is formed on the p-type amorphous silicon layer (see Fig. 1) and
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`which contains a metal oxide (P7, The material and the film forming methodfor forming the
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`second transparent conductivefilm 17 are the same asthosefor the first transparent conductive
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`film 14; P6, Examples of the transparent electrode material constituting the first transparent
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`conductivefilm 14 include indium tin oxide (ITO), tungsten-doped indium oxide (IWO)); and a
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`collector electrode (see the collector electrodes 19) which is formed on the second transparent
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`conductive layer (see Fig. 1, P7 The collector electrodes 18 and 19 include a plurality of bus bar
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`electrodes formed in parallel to each other, and a plurality of finger electrodes formed
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`orthogonal to these bus barelectrodes and in parallel with each other), but does not explicitly
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`disclose the claimed “a protective layer which is formed on the n-type crystalline silicon layer
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`and which mainly contains an insulation material’. However, NAKASHIMAdisclosesa silicon
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`solar cell, wherein a light-receiving-surface-side protection layer 10 is provided on the light-
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`receiving surface 4A of the photoelectric conversion body 101 so asto cover the light-receiving
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`surface 4A together with the surfacesof the light-receiving-surface-side electrodes 5 [0031],
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`wherein the protection layer thus formed can suppress damage in a surfaceportion of a
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`photovoltaic element, and suppress deterioration of the photovoltaic element due to moisture,
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`ultraviolet radiation, and the like [0003], wherein as the material of the light-receiving-surface-
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`side protection layer 10, particles made of a translucent material such as SiO2 and Al2O03 can
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`be used [0036].
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`It would have been obvious to one of the ordinary skill in the art before the
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`effectivefiling date of the claimed invention to employthe light-receiving-surface-side protection
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`layer made of SiO2 or Al2O03 in the device of KOBAYASHI as taught by NAKASHIMA, because
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`the protection layer can suppress damage in a surface portion of a photovoltaic element, and
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`suppressdeterioration of the photovoltaic element due to moisture, ultraviolet radiation, and the
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`like. Therefore, modified KOBAYASHI teachesa protective layer (see the light-receiving-
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`Application/Control Number: 16/101,788
`Art Unit: 1726
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`Page 15
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`surface-side protection layer made of SiO2 or Al2O3) whichis formed on