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`1. Acell culture chip having a stack structure formed by sequentially
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`stacking:
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`a first electrode provided on a main surface of a first board;
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`a first partition wall layer including a first main flow path, and a first
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`inlet flow path and a first outlet flow path connected to the first main flow path:
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`a planar mesh structure sheet used as a scaffolding material for cells;
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`a second partition wall layer including a second main flow path, anda
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`10
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`second inlet flow path and a second outlet flow path connected to the second
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`main flow path; and
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`a second electrode provided on a main surface of a second board,
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`wherein the planar mesh structure sheet is sandwiched between the
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`first partition wall layer and the second partition wall layer,
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`15
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`among aperture ratios of a surface of the planar mesh structure sheet
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`facing the first partition wall layer, an aperture ratio of a portion facing the
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`first main flow path is greater than an aperture ratios of portions facing the
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`first inlet flow path and thefirst outlet flow path, and
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`among aperture ratios of a surface of the planar mesh structure sheet
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`20
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`facing the second partition wall layer, an aperture ratio of a portion facing the
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`second main flow path is greater than an aperture ratios of portions facing the
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`secondinlet flow path and the second outlet flow path.
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`2. The cell culture chip of Claim 1,
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`25
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`wherein the planar mesh structure sheet used as the scaffolding
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`material is formed by crossing fibers of a polymer material at 30 degrees to 120
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`degrees, each fiber having a diameter of 1 pm to 50 pm.
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`18
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`
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`3. The cell culture chip of Claim 1,
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`wherein, in the planar mesh structure sheet, an interval between fibers
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`of a mesh structure of a scaffolding material corresponding to a main portion
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`where an upper flow path and a lower flow path face each other and cells are
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`cultured is 10 to 100 pm, and an interval between fibers of a mesh structure of
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`a scaffolding material facing a portion to or from which the upperflow path and
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`the lower flow path merge or branchoff, is 1 to 10 pm.
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`19
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