`
`1.(Amended) An elastic wave device comprising:
`
`a piezoelectric substrate formed of lithium niobate;
`
`an IDT electrode disposed on the piezoelectric substrate;
`
`a first dielectric layer disposed on the piezoelectric substrate, the
`
`first dielectric layer covering the IDT electrode; and
`
`a second dielectric layer disposed over the first dielectric layer, the
`
`second dielectric layer propagating a transverse wave faster than a speed
`
`10
`
`of a transverse wave propagating on the first dielectric layer;
`
`wherein
`
`a film thickness of the second dielectric layer is more than 0.8
`
`times as large as wavelength k of SH wave excited by the IDT electrode;
`
`a cut angle of the piezoelectric substrate is indicated by Euler
`
`15
`
`angles (¢, 9, and (p), and
`
`correction functions F1 and F2 are3
`
`[Equation 1]
`
`g—oz
`fig—0.09
`0.12—0.08g (¢)+ 0.4—0.2
`
`F1=———— 1 ———h1
`
`Egg)
`
`[Equation 2]
`
`[2—4.2
`“Th—0.09
`0.12—0.08 g (¢)+ 0.4—0.2
`
`F2 = —— 2
`
`112
`
`(‘15)
`
`25
`
`
`
`whereas h is a film thickness of the IDT electrode, a is a ratio of a
`
`density of the IDT electrode to a density of copper, and H is a film
`
`thickness of the first dielectric layer; and
`
`5
`
`10
`
`the g1 (¢), the g2 (¢), the hl ((25), and the h2 (¢) are:
`
`[Equation 3]
`g1(¢) = 0.0352¢2 — 0.0852¢ — 0.3795
`
`[Equation 4]
`g2(¢) = 0.0589¢2 — 0.4089¢ + 0.7821
`
`[Equation 5]
`h1(¢) = 0.0161¢2 — 0.1175¢ + 0.6964
`
`[Equation 2]
`h2(¢)= —0.0339¢2 +0.5496¢—1.3464;
`
`the cut angle of the piezoelectric substrate satisfiesi
`
`15
`
`1) When -77.5° s 0 < -72.5°,
`
`-0.5° S ¢ < 0.5° and -2.2° + F2 5 (p < -1.4° + F1
`
`or
`
`I
`
`0.5° : ¢ < 1.5° and -2.4° + F2 5 (p < -O.8° + F1
`
`or
`
`20
`
`1.5° S ¢ < 2.5° and -2.6° + F2 S (p < "02° + F1
`
`or
`
`25° 5 (b < 3.5° and -2.8° + F2 5 (p < 03° + F1
`
`or
`
`3.5° S (/5 < 4.5° and -3.1° + F2 5 (p < O.8° + F1
`
`25
`
`01'
`
`
`
`4.5° S (/5 < 5.5° and 33° + F2 5 (p < 1.3° + F1
`
`ii) When -72.5° s e < -67.5°,
`
`-O.5° 5 ¢ < 0.5° and 25° + F2 5 (p < -1.7° + F1
`
`01‘
`
`0.5° S ¢ < 1.5° and -2.6° + F2 5 (p < 'O.9° + F1
`
`01'
`
`1.5° 5 ¢ < 2.5° and 27° + F2 5 (p < '0.1° + F1
`
`01‘
`
`25° S ¢ < 3.5° and 27° + F2 5 (p < O.7° + F1
`
`10
`
`01‘
`
`3.5° 5 ¢ < 4.5° and 29° + F2 5 (p < 1.3° + F1
`
`01'
`
`45°: ¢ <5.5° and -3°+F2£cp<2°+F1
`
`iii) When ~67.5° S 9 < -62.5°,
`
`15
`
`-O.5° 5 ¢ < 0.5° and -3.2° + F2 5 (p < -2.2° + F1
`
`01'
`
`0.5° 5 ¢ < 1.5° and -3° + F2 _<_ (p < -0.9° + F1
`01'
`
`1.5° 5 ¢ < 2.5° and 27° + F2 5 (p < 0.4° + F1
`
`20
`
`01'
`
`25° 5 975 < 3.5° and -2.5° + F2 5 (p < 1.5° + F1
`
`01'
`
`3.5° 5 ¢ < 4.5° and -2.4° + F2 5 (p < 26° + F1
`
`01'
`
`25
`
`4.5° 5 ¢ < 5.5° and -2.4° + F2 5 (p < 33° + F1
`
`
`
`iv) When ~62.5° : e < -57.5°,
`
`'O.5° S ¢ < 0.5° and -5.2° + F2 S (p < '4.1° + F1
`
`01‘
`
`O.5° 5 ¢ < 1.5° and -4° + F2 S (p < '0.8° + F1
`
`01'
`
`1.5° 5 ¢ < 25° and -2.8° +F2 s (p < 2.1° + F1
`
`01'
`
`25° 3 ¢ < 3.5° and -1.8° + F2 5 (p < 4.1° + F1
`
`01‘
`
`3.5° 5 ¢ < 4.5° and -1.1° + F2 5 (p < 5.5° + F1
`
`01'
`
`4.5° 5 ¢ < 5.5° and -0.9° + F2 5 (p < 62° + F1.
`
`2. The elastic wave device of claim 1,
`
`15
`
`wherein
`
`the cut angle of the piezoelectric substrate is a value that makes
`
`an absolute value of a power flow angle of the SH wave excited by the IDT
`
`electrode to be less than 03°, and makes an absolute value of a power
`
`flow angle of the Stoneley wave excited by the IDT electrode to be not less
`
`20
`
`than 03°.
`
`3. (Cancelled)
`
`4. (Cancelled)
`
`25
`
`
`
`5. (Cancelled)
`
`6. Electronic equipment comprisingi
`
`the elastic wave device of claim 1; and
`
`a semiconductor integrated circuit device connected to the elastic
`
`wave device.
`
`
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