`
`Page 1 of 1
`
`PATENT ABSTRACTS OF JAPAN
`
`2007-251710
`(11)Publication number :
`(43)Date of publication of application : 27.09.2007
`
`(51 )lnt.C|.
`
`9/25
`HOS/f
`9/145
`[103/7
`MIL 47/09
`MIL 41/78
`
`(2006‘. 0])
`(2006'. 0])
`0006'. 0])
`(2006'. 07)
`
`(21)Application number : 2006-0713854
`(22)Date of filing :
`17.03.2006
`
`(71)Applicant : MURATA MFG CO LTD
`(72)Inventor :
`NISHIYAMA KENJI
`NAKAO TAKESHI
`KADOTA MICHIO
`
`(54) SURFACE ACOUSTIC WAVE DEVICE
`(57)Abstract:
`PROBLEM TO BE SOLVED: To provide a surface acoustic wave device for
`suppressing an influence of Rayleigh wave spuriousness by using an SH
`wave.
`SOLUTION: In this device, a first silicon oxide film 6 is formed on an
`LiNb03 substrate 2 of (0°
`i5" . 9, w) in a region except for an
`electrode formation region including mainly Cu, and an IDT electrode 3, and
`a second silicon oxide film 7 is formed so as to cover the electrode and the
`first silicon oxide film 6. Electrode density is 1.5 times or more of the first
`silicon oxide film.
`(0 of an Euler angle (0°
`i5° . 9. ([J)is in a range
`between 10° ~30° . 9 or III
`is within a hatching giving region range when
`an IDT electrode film thickness is 0.05 A . If the IDT electrode film thickness
`is other than 0.05 A, 9 or Ll}
`is within a range obtained by converting the
`
`range into 0 x expressed by a formula (1).
`
`<0”
`
`‘wlhi‘lx'rxwl um
`
`1:3
`
`http://wwwl 9.ipdl.inpit.go.jp/PA1/result/detail/main/wAAAdyainODA41925171 0P1
`
`2011/01/19
`
`