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18
`
`CLAIMS
`
`1. An elastic wave device comprising!
`
`a piezoelectric substrate;
`
`. an IDT electrode disposed on the piezoelectric substrate;
`
`a first dielectric layer disposed on the piezoelectric substrate, the
`
`first dielectric layer covering the IDT electrode; and
`
`a second dielectric layer disposed over the first dielectric layer, the
`
`second dielectric layer propagating a transverse wave faster than a speed
`
`10
`
`of a transverse wave propagating on the first dielectric layer;
`
`wherein
`
`a film thickness of the second dielectric layer is more than 0.8
`
`times as large as wavelength X of SH wave excited by the IDT electrode; and
`
`a cut angle of the piezoelectric substrate in indication of Euler
`
`15
`
`angles (¢, 6, and (p) is (15 ¢ 0°, 6 ¢ 0°, and (p 76 0°.
`
`2. The elastic wave device of claim 1,
`
`wherein
`
`the cut angle of the piezoelectric substrate is a value that makes
`
`20
`
`an absolute value of a power flow angle of the SH wave excited by the IDT
`
`electrode to be less than 03°, and makes an absolute value of a power
`
`flow angle of the Stoneley wave excited by the IDT electrode to be not less
`
`than 0.3°.
`
`25
`
`3. The elastic wave device of claim 1,
`
`

`

`19
`
`wherein
`
`the piezoelectric substrate is formed of lithium niobate, and
`
`the cut angle of the piezoelectric substrate in indication of Euler
`
`angles (¢, 6, and (9) satisfies:
`
`-0.5° 5 ¢ < 5.5°,
`
`'77.5° S 9 < -57.5°, and
`
`-5.2° S (p < 62°.
`
`4. The elastic wave device of claim 1,
`
`10
`
`wherein
`
`the piezoelectric substrate is formed of lithium niobate, and
`
`the cut angle of the piezoelectric substrate in indication of Euler
`
`angles (¢, 9, and cp) satisfies:
`
`i) When —77.5° S 9 < '72.5°,
`
`15
`
`'0.5° 5 ¢ < 0.5° and 22° 5 (p < '1.4°
`
`or
`
`0.5° S (I5 < 1.5° and '2.4° S (p < 'O.8°
`
`or
`
`1.5° 5 ¢ < 2.5° and -2.6° s (p < or
`
`20
`
`or
`
`2.5° 5 ¢ < 3.5° and '2.8° S (p < 0.3°
`
`or
`
`3.5° 5 ¢ < 4.5° and -3.1° s (p < 08°
`
`01'
`
`25
`
`45° _<_
`
`915 < 5.5° and 33° 5 (p < 1.3°
`
`

`

`20
`
`ii) When —72.5° S, G < -67.5°,
`
`-0.5° 5 ¢ < 0.5° and -2.5° s (p < ~1.7°
`
`01‘
`
`0.5° 5 ¢ < 1.5° and '2.6° S (p < ‘0.9°
`
`01'
`
`1.5° 3 ¢ < 2.5° and -2.7° S (,0 < '0.1°
`
`01'
`
`2.5° 5 ¢ < 3.5° and -2.7° s (p < 07°
`
`01'
`
`10
`
`3.5° S ¢ < 4.5° and '2.9° S (p < 13°
`
`01‘
`
`4.5° 5 ¢ < 5.5° and -3° 5 (p < 2°
`
`iii) When ~67.5° S 6 < '62.5°,
`
`-0.5° 5 ¢ < 0.5° and -3.2° s (p < -2.2°
`
`15
`
`01‘
`
`0.5° 5 ¢ < 1.5° and -3° 5 (p < -0.9°
`
`01'
`
`1.5° 5 ¢ < 2.5° and -2.7° s (p < 04°
`
`01‘
`
`20
`
`2.5° 5 ¢ < 3.5° and -2.5° s (p < 1.5°
`
`OI'
`
`3.5° 5 ¢ < 4.5° and -2.4° s (p < 2.6°
`
`01‘
`
`4.5° S (15 < 5.5° and -2.4° S (p < 3.3°
`
`25
`
`iv) When -62.5° s e < -57.5°,
`
`

`

`21
`
`‘0.5° 5 (15 < 0.5° and '5.2° S (p'< '4.1°
`
`or
`
`O.5° 5 ¢ < 1.5° and “4° 5 (p < '0.8°
`
`or
`
`1.5° 5 415 < 2.5° and '2.8° S (p < 2.1°
`
`or
`
`2.5° 5 ¢ < 3.5° and '1.8° S (p < 4.1°
`
`or
`
`3.5° 5 ¢ < 4.5° and '1.1 S (p < 5.5°
`
`10
`
`01‘
`
`4.5° S ¢ < 5.5° and '0.9° S (p < 62°.
`
`5. The elastic wave device of claim 1,
`
`wherein
`
`15
`
`the piezoelectric substrate is formed of lithium niobate; and
`
`when the cut angle of the piezoelectric substrate is indicated by
`
`Euler angles (¢, 6, and (p), and
`
`correction functions F1 and F2 arei
`
`[Equation 1]
`
`%—0.2
`flak—0‘09
`0.12—0.08g(¢)+0.4—0.2
`
`F1=————l —-——hl
`
`(W
`
`20
`
`[Equation 2]
`
`25
`
`

`

`22
`
`a_h — 0.09
`—Z——~—g2(¢)
`0.12—0.08
`
`E — 0.2
`A
`+_._.____
`0.4 — 0.2
`
`F2 =
`
`'
`
`h2
`
`(«5)
`
`Whereas h is a film thickness of the IDT electrode, a is a ratio of a
`
`density of the IDT electrode to a density of copper, and H is a film
`
`thickness of the first dielectric layer; and
`
`10
`
`15
`
`the g1(¢), the g2 (¢), the h1 ((15), and the h2 (¢) are:
`
`[Equation 3]
`g1(¢) = 00352;»2 — 0.0852¢ — 0.3795
`
`[Equation 4]
`g2(¢) = 0.0589519 — 0.4089¢ + 0.7821
`
`[Equation 5]
`h1(¢) = 0.0161¢2 — 0.1175¢ + 0.6964
`
`[Equation 2]
`h2(¢) = —0.0339¢2 + 0.5496(1) -1.3464;
`
`the cut angle of the piezoelectric substrate satisfies:
`
`i) When -77.5° _<_ 9 < -72.5°,
`
`-O.5° 5 915 < 0.5° and '2.2° + F2 S (p < '1.4° + F1
`
`20
`
`or
`
`05° 5 ¢ < 1.5° and '2.4° + F2 5 (p < '0.8° + F1
`
`01'
`
`1.5° 5 ¢ < 2.5° and -2.6° + F2 3 (p < -0.2° + F1
`
`or
`
`25
`
`2.5° 5 ¢ < 3.5° and -2.8° + F2 5 (p < 0.3° + F1
`
`

`

`23
`
`01‘
`
`3.5° 5 ¢ < 4.5° and -3.1° + F2 5 (p < 08° + F1
`
`01‘
`
`4.5° S ¢ < 5.5° and 33° + F2 S (p < 1.3° + F1
`
`ii) When '72.5° S 6 < '67.5°,
`
`-O.5° _<_ ¢ < 0.5° and -2.5° + F2 5 (p < '1.7° + F1
`
`01'
`
`0.5° S (15 < 1.5° and 26° + F2 5 (p < 0.9" + F1
`
`or
`
`10
`
`1.5° 3 ¢ < 2.5° and 27° + F2 5 (p < -0.1° + F1
`
`01'
`
`2.5° S ¢ < 3.5° and “27° + F2 5 (p < 0.7° + F1
`
`01‘
`
`3.5° 5 (15 < 4.5° and 29° + F2 5 (p < 1.3° + F1
`
`15
`
`01‘
`
`4.5°: ¢ <5.5° and -3°+F25(p<2°+F1
`
`111) When ~67.5° s e < -62.5°,
`
`05° 5 ¢ < 0.5° and 32° + F2 5 (p < '22" + F1
`
`01‘
`
`20
`
`0.5° 5 ¢ < 1.5° and -3° + F2 5 (p < -0.9° + F1
`
`01'
`
`1.5° 5 ¢ < 2.5° and -2.7° + F2 5 (p < O.4° + F1
`
`01‘
`
`2.5° 3 ¢ < 3.5° and 25° + F2 5 q) < 1.5° + F1
`
`25
`
`01‘
`
`

`

`24
`
`3.5° 5 ¢ < 4.5° and -2.4° + F2 5 (p < 26° + F1
`
`01'
`
`4.5° 3 ¢ < 5.5° and -2.4° + F2 5 (p < 33° + F1
`
`iv) When —62.5° s 6 < -57.5°,
`
`5
`
`-O.5° 5 ¢ < 0.5° and ~5.2° + F2 5 (p < -4.1° + F1
`
`01'
`
`0.5° 5 ¢ < 1.5° and -4° + F2 5 (p < 'O.8° + F1
`
`01'
`
`1.5° 5 925 < 2.5° and -2.8° +F2 s (p < 2.1° + F1
`
`10
`
`01‘
`
`2.5° S ¢ < 3.5° and -1.8° + F2 _<_ (p < 4.1° + F1
`
`01'
`
`3.5° 5 ¢ < 4.5° and -1.1° + F2 5 (p < 5.5° + F1
`
`01‘
`
`15
`
`4.5° 5 ¢ < 5.5° and -O.9° + F2 5 (p < 6.2° + F1.
`
`6. Electronic equipment comprising:
`
`the elastic wave device of claim 1; and
`
`a semiconductor integrated circuit device connected to the elastic
`
`2 0 wave device.
`
`

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