www.uspto.gov
`
`UNITED STATES DEPARTMENT OF COMMERCE
`United States Patent and TrademarkOffice
`Address; COMMISSIONER FOR PATENTS
`P.O. Box 1450
`Alexandria, Virginia 22313-1450
`
`16/263,382
`
`01/31/2019
`
`Yoshiro KITAMURA
`
`WASHM-60469
`
`7649
`
`“ens
`
`aR
`PEA
`PEARNE & GORDON LLP
`1801 EAST 9TH STREET
`SUITE 1200
`CLEVELAND,OH 44114-3108
`
`EVERHART, CARIDAD
`
`2895
`
`PAPER NUMBER
`
`NOTIFICATION DATE
`
`DELIVERY MODE
`
`09/17/2021
`
`ELECTRONIC
`
`Please find below and/or attached an Office communication concerning this application or proceeding.
`
`The time period for reply, if any, is set in the attached communication.
`
`Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the
`following e-mail address(es):
`
`patdocket@ pearne.com
`
`PTOL-90A (Rev. 04/07)
`
`

`

`
`
`Disposition of Claims*
`1-10 is/are pending in the application.
`)
`Claim(s)
`5a) Of the above claim(s) 7 is/are withdrawn from consideration.
`() Claim(s)__ is/are allowed.
`Claim(s) 1-6 and 8-10 is/are rejected.
`S)
`) © Claim(s)___is/are objected to.
`C] Claim(s
`are subjectto restriction and/or election requirement
`)
`S)
`* If any claims have been determined allowable, you maybeeligible to benefit from the Patent Prosecution Highway program at a
`participating intellectual property office for the corresponding application. For more information, please see
`http:/Awww.uspto.gov/patents/init_events/pph/index.jsp or send an inquiry to PPHfeedback@uspto.gov.
`
`) )
`
`Application Papers
`10) The specification is objected to by the Examiner.
`11)() The drawing(s) filedon__ is/are: a)C) accepted or b)C) objected to by the Examiner.
`Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CFR 1.85(a).
`Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CFR 1.121 (d).
`
`Priority under 35 U.S.C. § 119
`12) Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)-(d)or (f).
`Certified copies:
`cc) None ofthe:
`b)L) Some**
`a)¥) All
`1.4) Certified copies of the priority documents have been received.
`2.1) Certified copies of the priority documents have been received in Application No.
`3.2.) Copies of the certified copies of the priority documents have been receivedin this National Stage
`application from the International Bureau (PCT Rule 17.2(a)).
`* See the attached detailed Office action for a list of the certified copies not received.
`
`Attachment(s)
`
`1)
`
`Notice of References Cited (PTO-892)
`
`2) (J Information Disclosure Statement(s) (PTO/SB/08a and/or PTO/SB/08b)
`Paper No(s)/Mail Date
`U.S. Patent and Trademark Office
`
`3) (J Interview Summary (PTO-413)
`Paper No(s)/Mail Date
`(Qj Other:
`
`4)
`
`PTOL-326 (Rev. 11-13)
`
`Office Action Summary
`
`Part of Paper No./Mail Date 20210913
`
`Application No.
`Applicant(s)
`16/263,382
`KITAMURAetal.
`
`Office Action Summary Art Unit|AIA (FITF) StatusExaminer
`CARIDAD EVERHART
`2895
`Yes
`
`
`
`-- The MAILING DATEofthis communication appears on the cover sheet with the correspondence address --
`Period for Reply
`
`A SHORTENED STATUTORY PERIOD FOR REPLYIS SET TO EXPIRE 3 MONTHS FROM THE MAILING
`DATE OF THIS COMMUNICATION.
`Extensions of time may be available underthe provisions of 37 CFR 1.136(a). In no event, however, may a reply betimely filed after SIX (6) MONTHSfrom the mailing
`date of this communication.
`If NO period for reply is specified above, the maximum statutory period will apply and will expire SIX (6) MONTHSfrom the mailing date of this communication.
`-
`- Failure to reply within the set or extended period for reply will, by statute, cause the application to become ABANDONED (35 U.S.C. § 133}.
`Any reply received by the Office later than three months after the mailing date of this communication, evenif timely filed, may reduce any earned patent term
`adjustment. See 37 CFR 1.704(b).
`
`Status
`
`1) Responsive to communication(s) filed on 8/4/2021.
`C} A declaration(s)/affidavit(s) under 37 CFR 1.130(b) was/werefiled on
`
`2a)L) This action is FINAL. 2b)¥)This action is non-final.
`3)02 An election was madeby the applicant in responseto a restriction requirement set forth during the interview
`on
`; the restriction requirement and election have been incorporated into this action.
`4\0) Since this application is in condition for allowance except for formal matters, prosecution as to the merits is
`closed in accordance with the practice under Exparte Quayle, 1935 C.D. 11, 453 O.G. 213.
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 2
`
`Notice of Pre-AlA or AIA Status
`
`The present application,filed on or after March 16, 2013, is being examined under the first
`
`inventorto file provisions of the AIA.
`
`Continued Examination Under 37 CFR 1.114
`
`A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR
`
`1.17(e), was filed in this application after final rejection. Since this applicationis eligible for continued
`
`examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the
`
`finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's
`
`submission filed on 8/4/2021 has been entered.
`
`Response to Arguments
`
`Applicant's argumentsfiled 8/4/2021 have been fully considered. Applicant has amended claim
`
`1 to include the limitations “inside a wafer by collecting a laser beam emitted from a laser oscillator
`
`inside the wafer” and “formed in the modified-layer forming step to form a liquid layer” and “by a heat
`
`source” . Applicant’s arguments are primarily based upon Applicant’s amendmentfor claim1 and
`
`Applicant’s arguments for amended claims 2-3, 5, 6, and 8-10 are also primarily based upon Applicant’s
`
`amendment to theclaims. New grounds of rejection are made.
`
`Claim Objections
`
`Claim 1 objected to because of the following informalities: Claim 1 recites in line 3 “a laser
`
`beam emitted from a laser oscillator inside the wafer’. It seems the phase “inside the wafer” should be
`
`closer to “a laser beam”in order to clarify that the laser beam is inside the wafer. Appropriate
`
`correction is required.
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 3
`
`Claim 6 is objected to because of the following informalities: Claim 6 recites in line 14
`
`“separates”, which should read “separate”. Appropriate correction is required.
`
`Claim 10 is objected to because of the following informalities: Claim 1 recitesin line 3
`
`“wherein”, which is repeated from the previous line. Appropriate correction is required.
`
`Election/Restrictions
`
`Applicant’s election with traverse of electedclaims 1-6 and 8-10 withdrawn in the last Office
`
`Action , inthe reply filed on 8/4/2021 is acknowledged. The groundsfor the traversalis because claim 7
`
`is dependent upon claim 1. This traversalis not found to be persuasive because claim 1 has not been
`
`allowed.
`
`Claim Rejections - 35 USC § 103
`
`Inthe event the determination of the status of the application as subject to AIA35 U.S.C. 102
`
`and 103 (or as subject to pre-AlA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory
`
`basis for the rejection will not be considered a new ground ofrejection if the prior art relied upon, and
`
`the rationale supporting the rejection, would be the same under either status.
`
`The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections
`
`set forth in this Office action:
`
`A patent fora claimed invention may not be obtained, notwithstanding that the claimed inventionis
`notidentically disclosed as set forth ins ection 102,if the differences between the claimed invention
`and the prior art are such that the claimedinvention as a whole would have beenobvious before the
`effective filing date ofthe claimed invention to a person having ordinaryskillin the art to which the
`claimed invention pertains. Pa tentability s hall not be negated by the manner in which the invention
`was made.
`
`The factual inquiries for establishing a background for determining obviousness under 35 U.S.C.
`
`103 are summarized as follows:
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 4
`
`1. Determining the scope and contents of the prior art.
`
`2. Ascertaining the differences between the prior art and the claims at issue.
`
`3. Resolving the level of ordinary skill in the pertinent art.
`
`4. Considering objective evidence present in the application indicating obviousness or
`
`nonobviousness.
`
`This application currently names joint inventors. In considering patentability of the claims the
`
`examiner presumes that the subject matter of the various claims was commonly owned as of the
`
`effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised
`
`of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that
`
`was not commonly ownedas of the effective filing date of the later invention in order for the examiner
`
`to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art
`
`against the later invention.
`
`Claims 1-2, and 4-5 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US
`
`2012/0258554 A1) in view of Andoet al (US 2011/0039356 A1)(“Ando”) and of Tanaka et al (US
`
`2020/0180082 A1)(“Tanaka”).
`
`Belle discloses a slicing method, as Belle discloses a method for separation of a modified layer
`
`(para. 0051) including
`
`A modified layer forming step of forming a modified layer inside a workpiece which is a III-N
`
`material such as GaN or AlGaN (para. 0005) by collecting a laser beam inside the workpiece,as Belle
`
`discloses forming a modified layer at a level in a substrate which is to be separated (para. 0051), which
`
`suggests that the laser beamis collected at the desired level in the substrate . Although Belle discloses
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page5S
`
`there may be an intermediate energy absorbing layer 24, Belle also discloses that the layer may instead
`
`preferably be in the III-N semiconductorlayer (para. 0038),
`
`A step in which the modified layer is melted by heating at a temperatureless than that of the
`
`workpiece and equal to or more than that of the modified layer, as Belle discloses that the surrounding
`
`semiconductor substrate is not damaged, and Belle also discloses that the surrounding semiconductor
`
`substrate melts at a higher temperature than the modified layer (para. 0039)
`
`And a separating step of separating the workpiece at the melted modified layer as a boundary,
`
`as Belle discloses laser lift off at the boundary, which Belle discloses is the modified layer (para. 0051).
`
`Belle suggests the laser beam is collected as stated above, although the collected is not explicitly
`
`stated. Belle also is silent with respect to the melting to form a liquid from a heat source.
`
`Ando,in the same field of endeavoroflaser lifting off or peeling (Abstract and para. 0071), and
`
`Ando also discloses collection of the laser beam, as Ando discloses forming the modified layer in a GaN
`
`substrate by focusing the laser light position in a GaN substrate (para. 0056).
`
`Tanaka, in the samefield of endeavorof dividing semiconductor ingots (Abstract), discloses by
`
`laser irradiation (para. 0005) of a semiconductoringot (para. 0006) N layers of reformed material (para.
`
`0009), which is a disclosure of forming modified layers, and by heating the reformed layers (para. 0012),
`
`the heating using a heat source (para. 0034-0035).
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have combined the focusing of the laser beam bycollection as disclosed by
`
`Ando with the methad disclosed by Belle because Ando discloses a step which is of art recognized
`
`suitability for an intended purpose (MPEP 2144.07).
`
`It would have been obvious to one of ordinary skill in the art before the effectivefiling date of
`
`the claimed invention to have combined the arrangement disclosed by Tanaka with the method
`
`disclosed by Belle because Tanaka discloses a heating arrangementby which the reformedlayer can be
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 6
`
`melted (Tanaka, para. 0034) and by which the ingot slices can be separated (Tanaka, para. 0035) which
`
`Tanaka discloses to be beneficial (Tanaka, para. 0036).
`
`Reclaim 2: The combination of Belle and Ando and Tanaka discloses the thickness of the
`
`modified layer largerthana surface roughness of an unmodified layer, as Belle discloses topology, which
`
`corresponds to roughness, of unmodified layer of 30 nm (para. 0011), and thickness of modified layer
`
`which corresponds to the absorbing layer or the intermediate layer (para. 0038) , as Belle discloses
`
`forming a modified layer at a level in a substrate which is to be separated (para. 0051), which suggests
`
`that the laser beam is collected at the desired level in the substrate . Although Belle discloses there may
`
`be an intermediate energy absorbing layer 24, Belle also discloses that the layer may instead preferably
`
`be the IIl-N semiconductor layer (para. 0038), a layer which Belle discloses to be preferable at least 50
`
`nm and up to 500 nm (para. 0045), which satisfies the limitation of the modified layer larger thana
`
`surface roughness of an unmodified layer. The reasons for combining the references are the same as
`
`stated abovein the rejection of claim 1.
`
`Reclaim 4: The combination of Belle and Ando and Tanaka discloses a pulse width of equal to
`
`or more than 0.2 picoseconds and equal to or less than100 picoseconds, as Ando discloses
`
`femtosecondlaser (para. 0028-0029), which is a femtosecond laser (para. 0029), and therefore the pulse
`
`width is in the femtosecond range and overlaps the recited spot size range, and therefore the recited
`
`range is obvious (MPEP 2144.05).
`
`It would have been obvious to one of ordinary skill in the art before
`
`the effectivefiling date of the claimed invention to have combinedthe laser disclosed by Ando with the
`
`method disclosed by Belle in order to obtain the benefit disclosed by Ando of avoiding damage to the
`
`GaN-based semiconductor which is not part of the modified layer by the laser irradiation (para. 0028).
`
`Reclaim 5: The combination of Belle and Ando discloses the laser beam has a wavelength with
`
`a transmittance of 50% or more with respect to the workpiece, as Belle in view of Ando and Tanaka
`
`discloses the pulsed laser for which the wafer is transparent but absorbs wherethe laser is focused is
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 7
`
`used as stated above, and Belle discloses the portions of the III-N semiconductor which is not converted
`
`to modified layer has a transmittance of 90% ( Belle, para. 0046) for the intermediate layer (para. 0046).
`
`Belle discloses the intermediate layer may be GaN based orIII-N semiconductor which is not converted
`
`to modified layer (para. 0038-0039). Inan embodiment, Belle discloses a layer 12 of for example AlGaN
`
`(para. 0060) on a substrate 11 (para. 0060 and Fig. 5A), which is a disclosure that the IIIl-N material which
`
`is not converted to modified layer material has a transmittance of at least 50%. The reasons for
`
`combining the references are the same as stated abovein the rejection of claim 1.
`
`Claim 3 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US 2012/0258554
`
`A1) in view of Andoet al (US 2011/0039356 A1)(“Ando”) Tanaka et al (US 2020/0180082 A1)(“Tanaka”)
`
`as applied to claim 1 above, and further in view of Uemura (US 2017/0348960 A1).
`
`Belle in view of Ando and of Tanaka discloses the limitations of claim 1 as stated above. Bellein
`
`view of Ando and of Tanakais silent with respect to the wafer is separatedin a direction parallel toa
`
`scanning direction of the laser beam.
`
`Uemura, in the same field of endeavorof laser lift off (Abstract), discloses using a roller referred
`
`toa first end support (para. 0007) and which movesina direction from thefirst end of a substrate to
`
`the second end of a substrate (para. 0007) and which includes a portion referredto asafirst pillow
`
`(para. 0052) and which is used to carry outlift off by being applied in the x direction (para. 0082-0085
`
`and Fig. 11).
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have combined the arrangementdisclosed by Uemura with the method
`
`dicosed by Bellein view of Ando and of Tanaka because Uemura discloses a method of art recognized
`
`suitability for an intended purpose (MPEP 2144.07).
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 8
`
`Claims 6 and 10 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US
`
`2012/0258554 A1) in view of Andoet al (US 2011/0039356 A1)(“Ando”) and of Tanaka et al (US
`
`2020/0180082 A1)(“Tanaka”).
`
`Belle discloses a slicing apparatus, as Belle discloses an apparatus for separation of a modified
`
`layer (para. 0051) including
`
`A modified layer forming apparatus for forming a modified layer inside a workpiece which is a
`
`III-N material such as GaN or AlGaN (para. 0005) by collecting a laser beam inside the workpiece, as Belle
`
`discloses forming a modified layer at a level in a substrate which is to be separated (para. 0051), which
`
`suggests that the laser beamis collected at the desired level in the substrate . Although Belle discloses
`
`there may be an intermediate energy absorbing layer 24, Belle also discloses that the layer may instead
`
`preferably be in the III-N semiconductorlayer (para. 0038),
`
`An apparatus in which the modified layer is melted by heating at a temperatureless thanthat
`
`of the workpiece and equal to or more than that of the modified layer, as Belle discloses that the
`
`surrounding semiconductor substrate is not damaged, and Belle also discloses that the surrounding
`
`semiconductor substrate melts at a higher temperature than the modified layer (para. 0039)
`
`And a separating apparatus of separating the workpiece at the melted modified layer as a
`
`boundary, as Belle discloses laser lift off at the boundary, which Belle discloses is the modified layer
`
`(para. 0051).
`
`Belle suggests the laser beam is collected as stated above, although the collected is not explicitly
`
`stated. Belle also is silent with respect to the melting to form a liquid from a heat source.
`
`Ando,in the same field of endeavoroflaser lifting off or peeling (Abstract and para. 0071), and
`
`Ando also discloses collection of the laser beam, as Ando discloses forming the modified layer in a GaN
`
`substrate by focusing the laser light position in a GaN substrate (para. 0056).
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 9
`
`Tanaka, in the samefield of endeavorof dividing semiconductor ingots (Abstract), discloses by
`
`laser irradiation (para. 0005) of a semiconductoringot (para. 0006) N layers of reformed material (para.
`
`0009), which is a disclosure of forming modified layers, and by heating the reformed layers (para. 0012),
`
`the heating using a heat source (para. 0034-0035). Tanaka also discloses the laser scan while the stage
`
`52 movesthe ingot (para. 0023) and Tanaka also discloses moving the ingot while applying force to
`
`separate theslices (para. 0028 and 0036) and moving the ingot can also be done while heating (para.
`
`0023) and while maintaining the melting point of the melted semiconductor(para. 0034).
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have combined the focusing of the laser beam by collection as disclosed by
`
`Ando with the apparatus disclosed by Belle because Ando discloses a step which is of art recognized
`
`suitability for an intended purpose (MPEP 2144.07).
`
`It would have been obvious to one of ordinary skill in the art before the effectivefiling date of
`
`the claimed invention to have combined the arrangement disclosed by Tanaka with the aparatus
`
`disclosed by Belle because Tanaka discloses a heating arrangementby which the reformedlayer can be
`
`melted (Tanaka, para. 0034) and by which the ingot slices can be separated (Tanaka, para. 0035) which
`
`Tanaka discloses to be beneficial (Tanaka, para. 0036).
`
`Reclaim 10: The combination of Belle and Ando and Tanaka discloses the drive stage configured
`
`to form the layers by moving the ingot relative to the laser and apply a load to an endmost wafer and
`
`support the side of the ingot, as Tanaka discloses the laser scan while the stage 52 movesthe ingot
`
`(para. 0023) and Tanaka also discloses moving the ingot while applying force to separate theslices (para.
`
`0028 and 0036) and moving the ingot can also be done while heating (para. 0023) and while maintaining
`
`the melting point of the melted semiconductor(para. 0034). The reasons for combining the references
`
`are the same as stated above in the rejection of claim 6.
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 10
`
`Claim 8 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US 2012/0258554
`
`A1) in view of Andoet al (US 2011/0039356 A1)(“Ando”) Tanaka et al (US 2020/0180082 A1)(“Tanaka”)
`
`as applied to claim 1 above, and further in view of Uemura (US 2017/0348960A1).
`
`Belle in view of Ando and of Tanaka discloses the limitations of claim 1 as stated above. Bellein
`
`view of Ando and of Tanakais silent with respect to the wafer is separatedin a direction parallel toa
`
`scanning direction of the laser beam.
`
`Uemura, in the same field of endeavorof laser lift off (Abstract), discloses using a roller referred
`
`toa first end support (para. 0007) and which movesina direction from thefirst end of a substrate to
`
`the second end of a substrate (para. 0007) and which includes a portion referred toasafirst pillow
`
`(para. 0052) and which is used to carry outlift off by being applied in the x direction (para. 0082-0085
`
`and Fig. 11). Umemuraalso discloses a load applied tothe end of the workpiece by the plate 11 (para.
`
`0046 andFig. 4 B1).
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have combined the arrangement disclosed by Uemura with the method
`
`disclosed by Belle in view of Ando and of Tanaka in order to obtain the benefit of completely separating
`
`the layers which are desired to be separated (Uemura para. 0099).
`
`Claim 9 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US 2012/0258554
`
`A1) in view of Andoet al (US 2011/0039356 A1)(“Ando”) and of Tanaka et al (US 2020/0180082
`
`A1)(“Tanaka”) as applied to claim 6 above, and further in view of Okada et al (US 2003/0113984
`
`A1)(“Okada”).
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 11
`
`Belle in view of Ando and of Tanaka discloses the limitations of claim6 as stated above. Tanaka
`
`also discloses the ingot canbe retained by achuck by adhesive (para. 0034). Belle in view of Ando and
`
`of Tanakais silent with respect to adhesive sheet.
`
`Okada, in the same field of endeavorofslicing ingots (para. 0027), discloses that a support can
`
`include an adhesive or an adhesive layer (para. 0030-0031).
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have used an adhesive sheet in the apparatus disclosed by Bellein view of
`
`Ando and of Tanaka in view of the disclosure made by Okada that an adhesive sheet or an adhesive can
`
`be used in the support in the slicing of ingots, as this is a disclosure of art recognized equivalence for the
`
`same purpose (MPEP 2144.06).
`
`Anyinquiry concerning this communication or earlier communications from the examiner
`
`should be directed to CARIDAD EVERHART whosetelephone number is (571)272-1892. The examiner
`
`can normally be reached on M-F 6:00 AM-4:00 PM.
`
`Examiner interviews are available via telephone, in-person, and video conferencing using a
`
`USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use
`
`the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
`
`If attempts to reachthe examiner by telephone are unsuccessful, the examiner’s supervisor,
`
`Eliseo Ramos-Feliciano can be reached on 571-272-7925. The fax phone number for the organization
`
`wherethis application or proceedingis assigned is 571-273-8300.
`
`Information regarding the status of an application may be obtained from the Patent Application
`
`Information Retrieval (PAIR) system. Status information for published applications may be obtained
`
`from either Private PAIR or Public PAIR. Status information for unpublished applicationsis available
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 12
`
`through Private PAIR only. For more information about the PAIR system, see https://ppair-
`
`my.uspto. gov/pair/PrivatePair. Should you have questions on accessto the Private PAIR system, contact
`
`the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a
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`USPTO Customer Service Representative or access to the automated information system, call 800-786-
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`9199 (IN USA OR CANADA)or 571-272-1000.
`
`/CARIDAD EVERHART/
`Primary Examiner, Art Unit 2895
`
`