www.uspto.gov
`
`UNITED STATES DEPARTMENT OF COMMERCE
`United States Patent and TrademarkOffice
`Address: COMMISSIONER FOR PATENTS
`P.O. Box 1450
`Alexandria, Virginia 22313-1450
`
`16/263,382
`
`01/31/2019
`
`Yoshiro KITAMURA
`
`WASHM-60469
`
`7649
`
`mine
`
`OR
`PEA
`PEARNE & GORDON LLP
`1801 EAST 9TH STREET
`SUITE 1200
`CLEVELAND,OH 44114-3108
`
`EVERHART, CARIDAD
`
`2895
`
`PAPER NUMBER
`
`NOTIFICATION DATE
`
`DELIVERY MODE
`
`09/01/2022
`
`ELECTRONIC
`
`Please find below and/or attached an Office communication concerning this application or proceeding.
`
`Thetime period for reply, if any, is set in the attached communication.
`
`Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the
`following e-mail address(es):
`
`patdocket@ pearne.com
`
`PTOL-90A (Rev. 04/07)
`
`

`

`
`
`Disposition of Claims*
`1,4-6 and 8-12 is/are pending in the application.
`)
`Claim(s)
`5a) Of the above claim(s) 7 is/are withdrawn from consideration.
`[) Claim(s)__ is/are allowed.
`Claim(s) 1,4-6 and 8-12 is/are rejected.
`S)
`) © Claim(s)____is/are objected to.
`C] Claim(s
`are subjectto restriction and/or election requirement
`)
`S)
`“If any claims have been determined allowable, you maybeeligible to benefit from the Patent Prosecution Highway program at a
`participating intellectual property office for the corresponding application. For more information, please see
`http:/Awww.uspto.gov/patents/init_events/pph/index.jsp or send an inquiry to PPHfeedback@uspto.gov.
`
`) )
`
`Application Papers
`10) The specification is objected to by the Examiner.
`11)M The drawing(s) filed on 1/31/2019 is/are: a)¥) accepted or b)C) objected to by the Examiner.
`Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CFR 1.85(a).
`Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CFR 1.121 (d).
`
`Priority under 35 U.S.C. § 119
`12)[¥] Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)-(d) or (f).
`Certified copies:
`c)() None ofthe:
`b)( Some**
`a) All
`1.4] Certified copies of the priority documents have been received.
`2.1.) Certified copies of the priority documents have beenreceived in Application No.
`3.2.) Copies of the certified copies of the priority documents have been receivedin this National Stage
`application from the International Bureau (PCT Rule 17.2(a)).
`* See the attached detailed Office action for a list of the certified copies not received.
`
`Attachment(s)
`
`1)
`
`Notice of References Cited (PTO-892)
`
`Information Disclosure Statement(s) (PTO/SB/08a and/or PTO/SB/08b)
`2)
`Paper No(s)/Mail Date
`U.S. Patent and Trademark Office
`
`3)
`
`(LJ Interview Summary (PTO-413)
`Paper No(s)/Mail Date
`4) (J Other:
`
`PTOL-326 (Rev. 11-13)
`
`Office Action Summary
`
`Part of Paper No./Mail Date 20220824
`
`Application No.
`Applicant(s)
`16/263,382
`KITAMURAetal.
`
`Office Action Summary Art Unit|AIA (FITF) StatusExaminer
`CARIDAD EVERHART
`2895
`Yes
`
`
`
`-- The MAILING DATEof this communication appears on the cover sheet with the correspondence address --
`Period for Reply
`
`A SHORTENED STATUTORY PERIOD FOR REPLYIS SET TO EXPIRE 3 MONTHS FROM THE MAILING
`DATE OF THIS COMMUNICATION.
`Extensions of time may be available underthe provisions of 37 CFR 1.136(a). In no event, however, may a reply betimely filed after SIX (6) MONTHSfrom the mailing
`date of this communication.
`If NO period for reply is specified above, the maximum statutory period will apply and will expire SIX (6) MONTHSfrom the mailing date of this communication.
`-
`- Failure to reply within the set or extended period for reply will, by statute, cause the application to become ABANDONED (35 U.S.C. § 133).
`Any reply received by the Office later than three months after the mailing date of this communication, evenif timely filed, may reduce any earned patent term
`adjustment. See 37 CFR 1.704(b).
`
`Status
`
`1) Responsive to communication(s)filed on 6/13/2022.
`C} A declaration(s)/affidavit(s) under 37 CFR 1.130(b) was/werefiled on
`
`2a)() This action is FINAL. 2b)¥)This action is non-final.
`3)02 An election was madeby the applicant in responseto a restriction requirement set forth during the interview
`on
`; the restriction requirement and election have been incorporated into this action.
`4)\0) Since this application is in condition for allowance except for formal matters, prosecution as to the merits is
`closed in accordance with the practice under Exparte Quayle, 1935 C.D. 11, 453 O.G. 213.
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 2
`
`Notice of Pre-AlA or AIA Status
`
`The present application,filed on or after March 16, 2013, is being examined under the first
`
`inventorto file provisions of the AIA.
`
`Continued Examination Under 37 CFR 1.114
`
`A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR
`
`1.17(e), was filed in this application after final rejection. Since this applicationis eligible for continued
`
`examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the
`
`finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's
`
`submission filed on 6/13/2022 has been entered.
`
`Response to Arguments
`
`Applicant's argumentsfiled 6/13/2022 have been fully considered. Applicant has argued that
`
`claim 9 should be allowed because claim 9 was not rejected. This argumentis respectfully found to be
`
`not persuasive because claim 9 was not indicated to be allowable and claim 6 from which claim 9
`
`depends was rejected in the last Office Action. Applicant has amended claim 1 to require “scanning a
`
`laser beam in X and Y directions from a laser oscillator in a Z direction to collect the laser beam inside
`
`the wafer to form a modified layer therein comprising a plurality of modified portions continuous to
`
`each otherin the X anYdirections” “The modified layer has a shape with irregularities due to variation
`
`in the Z direction between individual modified portions of the plurality of modified portions”
`
`“thickness
`
`We.
`
`of eachof the plurality of modified portions... is largerthana difference in height between highest and
`
`lowest positions of an unmodified layer of the wafer.” “The unmodified layer has a shape with
`
`irregularities corresponding to the variation in the Z direction between the individual modified
`
`portions.” and that the prior art relied upon in the last Office Action do not disclose, teach, or suggest all
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 3
`
`of the limitations of amended claim 1. Applicant has argued that claim 6 has been similarly amended
`
`and thatthe claims depending from claim 1 and claim 6 should be allowed for the same reasons. New
`
`grounds of rejection are made.
`
`Claim Rejections - 35 USC § 103
`
`Inthe event the determination of the status of the application as subject to AIA35 U.S.C. 102
`
`and 103 (or as subject to pre-AlA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory
`
`basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and
`
`the rationale supporting the rejection, would be the same under either status.
`
`The following is a quotation of 35 U.S.C. 103 which formsthe basis for all obviousness rejections
`
`set forth in this Office action:
`
`A patent fora claimed invention may not be obtained, notwithstanding that the claimed inventionis
`notidentically disclosed as set forth ins ection 102, if the differences between the claimed invention
`and the prior art are such that the claimed invention as a whole would have been obvious before the
`effective filing date ofthe claimed invention to a person having ordinary skillin the art to which the
`claimed invention pertains. Pa tentability s hall not be negated by the mannerin which the invention
`was made.
`
`The factual inquiries for establishing a background for determining obviousness under 35 U.S.C.
`
`103 are summarized as follows:
`
`1. Determining the scope and contents of the prior art.
`
`2. Ascertaining the differences between the prior art and the claims at issue.
`
`3. Resolving the level of ordinary skill in the pertinent art.
`
`4. Considering objective evidence present in the application indicating obviousness or
`
`nonobviousness.
`
`This application currently names joint inventors. In considering patentability of the claims the
`
`examiner presumesthat the subject matter of the various claims was commonly ownedas of the
`
`effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised
`
`of the obligation under 37 CFR 1.56 to point out the inventor and effectivefiling dates of each claim that
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 4
`
`was not commonly ownedas of the effective filing date of the later invention in order for the examiner
`
`to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art
`
`against the later invention.
`
`Claims 1, 4-5 and 11 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US
`
`2012/0258554 A1) in view of Ando et al (US 2011/0039356 A1)(“Ando”) and of Yamamotoetal (US
`
`2020/0365758 A1)(“Yamamoto’”).
`
`Belle discloses a slicing method, as Belle discloses a method for separation of a modified layer
`
`(para. 0051) including
`
`A modified layer forming step of forming a modified layer inside a workpiece which is a III-N
`
`material such as GaNor AlGaN (para. 0005) by collecting a laser beam inside the workpiece,as Belle
`
`discloses forming a modified layer at a level in a substrate which is to be separated (para. 0051), which
`
`suggests that the laser beamis collected at the desired level in the substrate . Although Belle discloses
`
`there may be an intermediate energy absorbing layer 24, Belle also discloses that the layer may instead
`
`preferably be in the III-N semiconductorlayer (para. 0038),
`
`A step in which the modified layer is melted by heating at a temperature less than that of the
`
`workpiece and equal to or more than that of the modified layer, as Belle discloses that the surrounding
`
`semiconductor substrate is not damaged, and Belle also discloses that the surrounding semiconductor
`
`substrate melts at a higher temperature than the modified layer (para. 0039)
`
`And a separating step of separating the workpiece at the melted modified layer as a boundary,
`
`as Belle discloses laser lift off at the boundary, which Belle discloses is the modified layer (para. 0051).
`
`Belle discloses the thickness of the modified layer larger than a surface roughness of an
`
`unmodified layer, as Belle discloses topology, which corresponds to roughness, of unmodified layer of
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page5S
`
`30 nm (para. 0011), and thickness of modified layer which corresponds to the absorbing layer or the
`
`intermediate layer (para. 0038) , as Belle discloses forming a modified layer at a level in a substrate
`
`which is to be separated (para. 0051), which suggests that the laser beam is collected at the desired
`
`level in the substrate. Although Belle discloses there may be an intermediate energy absorbing layer
`
`24, Belle also discloses that the layer may instead preferably be the III-N semiconductorlayer (para.
`
`0038), a layer which Belle discloses to be preferable at least 50 nm and up to 500 nm (para. 0045), which
`
`satisfies the limitation of the modified layer larger thana surface roughness of an unmodified layer.
`
`Belle suggests the laser beam is collected as stated above, although the collected is not explicitly
`
`stated, and Belle is silent with respect to scanning a laser beam in X and Y directions from a laser
`
`oscillator in aZ direction to collect the laser beam inside the wafer to form a modified layer therein
`
`comprising a plurality of modified portions continuous to eachother in the X anY directions, the
`
`modified layer has a shape with irregularities due to variationin the Z direction between individual
`
`modified portions of the plurality of modified portions and thickness of each of the plurality of modified
`
`portionsis larger thana difference in height between highest and lowest positions of an unmodified
`
`layer of the wafer, the unmodified layer has a shape with irregularities corresponding to the variation in
`
`the Z direction between the individual modified portions.
`
`Ando,in the same field of endeavoroflaser lifting off or peeling (Abstract and para. 0071), and
`
`Ando also discloses collection of the laser beam, as Ando discloses forming the modified layer in a GaN
`
`substrate by focusing the laser light position in a GaN substrate (para. 0056).
`
`Yamamoto,in the same field of endeavorof irradiating a substrate with laser pulses to a focal
`
`position at a certain distance (Abstract), discloses ultrashort laser pulses such as femtosecond laser
`
`pulses (para. 0070) which by causing carrier-phononlattice vibrations causes phase transition such as
`
`melting and vaportization (para. 0070) and crack propagation (para. 0073). Yamamotoalso discloses the
`
`controlling crack propagation (para. 0059), the laser is focused at a certain depth of the substrate and
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 6
`
`laser marks are made at a certain distance from each other at that depth (para. 0057) and the laser can
`
`also be scanned at twodifferent depths (par. 0079), which is a disclosure of more than one slice.
`
`Yamamotoalso discloses a benefit of the method is to avoid damage o the semiconductor layers (para.
`
`0077). With respect to the irregularities corresponding to the variation in the Z direction, Yamamoto
`
`discloses in Fig. 12 the crack propagation! the depth or Z direction is best or graded “A” in the imagesin
`
`which the cracking shows the most roughnessin the Z direction (Fig. 12 and para. 0073-0074) and is
`
`graded “C’or worst in the imagesin which the roughnessin the Z direction is least (Fig. 12 and para.
`
`0073-0074).
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have combined the focusing of the laser beam by collection as disclosed by
`
`Ando with the methad disclosed by Belle because Ando discloses a step which is of art recognized
`
`suitability for an intended purpose (MPEP 2144.07).
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have combined the arrangementdisclosed by Yamamoto with the method
`
`disclosed by Belle in order to obtain the benefit disclosed by Yamamotoas stated above.
`
`Reclaim 4: The combination of Belle and Ando and Yamamoto discloses a pulse width of equal
`
`toor more than 0.2 picoseconds and equal toor less than 100 picoseconds, as Ando discloses
`
`femtosecondlaser (para. 0028-0029), which is a femtosecond laser (para. 0029), and therefore the pulse
`
`width is in the femtosecond range and overlaps the recited spot size range, and therefore the recited
`
`rangeis obvious (MPEP 2144.05).
`
`It would have been obvious to oneof ordinary skill in the art before
`
`the effectivefiling date of the claimed invention to have combinedthe laser disclosed by Ando with the
`
`method disclosed by Belle in order to obtain the benefit disclosed by Ando of avoiding damage to the
`
`GaN-based semiconductor which is not part of the modified layer by the laser irradiation (para. 0028).
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 7
`
`Reclaim 5: The combination of Belle and Ando and Yamamoto discloses the laser beam has a
`
`wavelength with a transmittance of 50% or more with respect to the workpiece, as Belle in view of Ando
`
`discloses the pulsed laser for which the wafer is transparent but absorbs wherethe laser is focused is
`
`used as stated above, and Belle discloses the portions of the III-N semiconductor which is not converted
`
`to modified layer has a transmittance of 90% ( Belle, para. 0046) for the intermediate layer (para. 0046).
`
`Belle discloses the intermediate layer may be GaN basedorIII-N semiconductor which is not converted
`
`to modified layer (para. 0038-0039). Inan embodiment, Belle discloses a layer 12 of for example AlGaN
`
`(para. 0060) on a substrate 11 (para. 0060 and Fig. 5A), which is a disclosure that the III-N material which
`
`is not converted to modified layer material has a transmittance of at least 50%. The reasons for
`
`combining the references are the same as stated above in the rejection of claim 1.
`
`Reclaim 11: The combination of Belle and Ando and Yamamoto discloses moving the wafer
`
`relative to the laser, as Ando discloses moving the stage(para. 0030), which is a disclosure of moving the
`
`wafer which is on the stage, and Andoalso discloses moving the stage in the vertical direction (para.
`
`0059) using a controller (para. 0059).
`
`Claim(s) 6, 10, 12 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US
`
`2012/0258554 A1) in view of Ando et al (US 2011/0039356 A1)(Ando”) and of Endoetal (US
`
`2007/0004169 A1)(“Endo”) and of Tanaka et al (US 2020/0180082 A1)(“Tanaka”) and of Kagamida (US
`
`5,582,536) and of Yamamotoet al (US 2020/0365758 A1)(“Yamamoto”).
`
`Belle discloses a slicing apparatus as Belle discloses a method for separation of a modified layer
`
`(para. 0051) including
`
`A modified layer forming step of forming a modified layer inside a workpiece which is a III-N
`
`material such as GaNor AlGaN (para. 0005) by collecting a laser beam inside the workpiece,as Belle
`
`discloses forming a modified layer at a level in a substrate which is to be separated (para. 0051), which
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 8
`
`suggests that the laser beamis collected at the desired level in the substrate . Although Belle discloses
`
`there may be an intermediate energy absorbing layer 24, Belle also discloses that the layer may instead
`
`preferably be in the III-N semiconductorlayer (para. 0038),
`
`A step in which the modified layer is melted by heating at a temperature less than that of the
`
`workpiece and equal to or more than that of the modified layer, as Belle discloses that the surrounding
`
`semiconductor substrate is not damaged, and Belle also discloses that the surrounding semiconductor
`
`substrate melts at a higher temperature thanthe modified layer (para. 0039)
`
`And a separating step of separating the workpiece at the melted modified layer as a boundary,
`
`as Belle discloses laser lift off at the boundary, which Belle discloses is the modified layer (para. 0051).
`
`Belle discloses the thickness of the modified layer larger than a surface roughness of an
`
`unmodified layer, as Belle discloses topology, which corresponds to roughness, of unmodified layer of
`
`30 nm (para. 0011), and thickness of modified layer which corresponds to the absorbing layer or the
`
`intermediate layer (para. 0038) , as Belle discloses forming a modified layer at a level ina substrate
`
`which is to be separated (para. 0051), which suggests that the laser beam is collected at the desired
`
`level in the substrate. Although Belle discloses there may be an intermediate energy absorbing layer
`
`24, Belle also discloses that the layer may instead preferably be the III-N semiconductorlayer (para.
`
`0038), a layer which Belle discloses to be preferable at least 50 nm and up to 500 nm (para. 0045), which
`
`satisfies the limitation of the modified layer larger thana surface roughness of an unmodified layer.
`
`Belle suggests the laser beam is collected as stated above, although the collected is not explicitly
`
`stated, and Belle is silent with respect to scanning a laser beam in X and Y directions from a laser
`
`oscillator in aZ direction to collect the laser beam inside the wafer to form a modified layer therein
`
`comprising a plurality of modified portions continuous to eachother in the X anY directions, the
`
`modified layer has a shape with irregularities due to variationin the Z direction between individual
`
`modified portions of the plurality of modified portions and thickness of each of the plurality of modified
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 9
`
`portionsis larger thana difference in height between highest and lowest positions of an unmodified
`
`layer of the wafer, the unmodified layer has a shape with irregularities corresponding to the variation in
`
`the Z direction between the individual modified portions.
`
`Ando,in the same field of endeavoroflaser lifting off or peeling (Abstract and para. 0071), and
`
`Ando also discloses collection of the laser beam, as Ando discloses forming the modified layer in a GaN
`
`substrate by focusing the laser light position ina GaN substrate (para. 0056).
`
`Endo, inthe samefield of endeavor of cleavage of semiconductor wafers (Abstract), discloses
`
`that the modified region 10d which is in the region which has been implanted with hydrogen has a
`
`roughness and the roughnessof the active layer 10A is minimized by the splitting at the modified layer
`
`(para. 0065).
`
`Tanaka, in the samefield of endeavorof dividing semiconductor ingots (Abstract),| discloses by
`
`laser irradiation (para. 0005) of a semiconductoringot (para. 0006) N layers of reformed material (para.
`
`0009), which is a disclosure of forming modified layers, and by heating the refoemed layers(para. 0012),
`
`the heating using a heat source (para. 0034-0035). Tanaka also discloses the laser scan while the stage
`
`52 moves the ingot (para. 0023). Tanaka also disclose moving the ingot while applying force to separate
`
`the slices (para. 008 and 0036) and moving the ingot can also be done while heating (para. 0023) and
`
`while maintaining the melting point of the melted semiconductor(para. 0034).
`
`Tagamida in the same field of endeavorofslicing a wafer (Abstract), discloses a support for the
`
`ingot at the upper portion in which theslicing takes place (Fig. 1 and col. 4, lines 1-8), in which Kagamida
`
`discloses the ingot 10 is moved ina direction D into position for slicing and the holder orslider 20 holds
`
`the ingot around the top of the ingot , which position is above wheretheslice is cut, and provides
`
`protection from the portion of the ingot which is not cut.
`
`It would have been obvious t one of ordinaryskill in the art before the effective filing date of the
`
`claimed invention to have combined the focusing of the laser beam bycollection as disclosed by Ando
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 10
`
`with the arrangementdisclosed by Belle because Ando discloses a step which is of art recognized
`
`suitability foe an intended purpose (MPEP 2144.07).
`
`It would have been obvious to one of ordinary skill in the art before the effective date of the
`
`claimed invention to have combined the disclosure made by Endo withthe apparatus discloed by Belle
`
`in order toobtain the benefits disclosed by Endo.
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have combined the arrangementdisclosed by Tanaka with the apparatus
`
`discloed by Belle because Tanaka discloses a heating arrangementby which the reformed layer can be
`
`melted (Tanaka, para. 0034) and by which ingot slices can be separated (Tanaka, para. 0035) which
`
`Tanaka discloses to be beneficial (Tanaka, para. 0036).
`
`Yamamoto, in the same field of endeavorof irradiating a substrate with laser pulses to a focal
`
`position at a certain distance (Abstract), discloses ultrashort laser pulses such as femtosecond laser
`
`pulses (para. 0070) which by causing carrier-phonon lattice vibrations causes phase transition such as
`
`melting and vaportization (para. 0070) and crack propagation (para. 0073). Yamamotoalso discloses the
`
`controlling crack propagation (para. 0059), the laser is focused at a certaindepth of the substrate and
`
`laser marks are made atacertain distance from each other at that depth (para. 0057) and the laser can
`
`also be scanned at twodifferent depths (par. 0079), which is a disclosure of more than one slice.
`
`Yamamotoalso discloses a benefit of the method is to avoid damage o the semiconductorlayers (para.
`
`0077). With respect to the irregularities corresponding to the variation in the Z direction, Yamamoto
`
`discloses in Fig. 12 the crack propagation | the depth or Z direction is best or graded “A” in the imagesin
`
`which the cracking shows the most roughnessin the Z direction (Fig. 12 and para. 0073-0074) and is
`
`graded “C’or worst in the imagesin which the roughnessin the Z direction is least (Fig. 12 and para.
`
`0073-0074).
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
`
`Page 11
`
`It would have been obvious to one of ordinaryskill in the art before the effective filing date of
`
`the claimed invention to have combined the focusing of the laser beam by collection as disclosed by
`
`Ando with the methad disclosed by Belle because Ando discloses a step which is of art recognized
`
`suitability for an intended purpose (MPEP 2144.07).
`
`It would have been obvious to one of ordinary skill in the art before the effective filing date of
`
`the claimed invention to have combined the arrangement disclosed by Yamamoto with the method
`
`disclosed by Belle in order to obtain the benefit disclosed by Yamamotoas stated above.
`
`Reclaim 10: The combination of Belle, Ando, Endo, Tanaka, Kagamida and Yamamotodisclose
`
`the drive stage to form the layers by moving the ingot relative to the laser and apply a load to an
`
`indmost wafer and support the side of the ingot, as Tanaka discloses the laser scan while the stage 52
`
`moves the ingot (para. 0023) and Tanaka also disclose moving the ingot while applying force to separate
`
`the slices (para. 0028 and 0036) an dmoving the ingot can also be done while heating (para. 0023) and
`
`maintaining the melting point of the melted semiconductor(para. 0034).
`
`Reclaim 12: The comgination of Belle, Ano, Endo, Tanaka, Kagamida and Yamamoto discloses
`
`the side surfaces of the wafers exposed, as Kagamida discloses in Fig. 1 the sides of the wafers exposed
`
`in the holder which movesin the direction D to lower the wafersinto the slicer portion of the apparatus.
`
`Claim 8 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US 2012/0258554
`
`A1) in view of Andoet al (US 2011/0039356 A1)(“Ando”) and Yamamotoetal (US 2020/0365758
`
`A1)(“Yamamoto”) as applied to claim1 above, and further in view of Uemura (US 2017/0348960A1).
`
`Belle in view of Ando and Yamamoto discloses the limitations of claim 1 as stated above. Belle
`
`in view of Ando and Yamamotois silent with respect to the wafer is separated in a direction parallel toa
`
`scanning direction of the laser beam.
`
`

`

`Application/Control Number: 16/263,382
`Art Unit: 2895
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`Page 12
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`Uemura, in the same field of endeavor of laser lift off (Abstract), discloses using a roller referred
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`toa first end support (para. 0007) and which movesina direction from thefirst end of a substrate to
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`the second end of a substrate (para. 0007) and which includes a portion referredto as a first pillow
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`(para. 0052) and which is used to carry outlift off by being applied in the x direction (para. 0082-0085
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`and Fig. 11). Umemuraalso discloses a load applied tothe end of the workpiece by the plate 11 (para.
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`0046 and Fig. 4 B1).
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`It would have been obvious to one of ordinary skill in the art before the effective filing date of
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`the claimed invention to have combined the arrangement disclosed by Uemura with the method
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`disclosed by Belle in view of Ando and Yamamotoin order to obtain the benefit of completely
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`separating the layers which are desired to be separated (Uemurapara. 0099).
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`Claim(s) 9 is/are rejected under 35 U.S.C. 103 as being unpatentable over Belle (US
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`2012/0258554 A1) in view of Ando et al (US 2011/0039356 A1)(“Ando”) and Yamamotoetal (US
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`2020/0365758 A1)(“Yamamoto”) as applied to claim 6 above, and further in view of Sawada (US
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`2002/0115235 A1) and of Yamashita (US 2007/0012666 A1).
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`Belle in view of Ando and Yamamoto discloses the limitations of claim 6 as stated above. Belle
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`in view of Ando and Yamamotois silent with respect to an adhesive sheet in the separation section.
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`Sawada, in the samefield of endeavor of holding a substrate on atable with an adhesive sheet
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`(Abstract), discloses holding a substrate on an x-y table using an adhesive sheet, and heating the table
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`by a built-in heater, and the table has translation (para. 0056 ).
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`Yamashita, in the same field of endeavorof laser processing a substrate on an x-y table (Abstract
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`and para. 0029), discloses an x-y table includes movementof the table (para. 0029).
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`

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`Application/Control Number: 16/263,382
`Art Unit: 2895
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`Page 13
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`It would have been obvious to one of ordinary skill
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`in the art before the effective filing date of
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`the claimed invention to have included holding a substrate using adhesive layer as disclosed by Sawada
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`in the device and method disclosed by Belle in view of Ando and Yamamoto because Sawada and
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`Yamashita discloses an arrangement well known in the art for an intended purpose (MPEP 2144.07).
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`Anyinquiry concerning this communication or earlier communications from the examiner
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`should be directed to CARIDAD EVERHART whosetelephone number is (571)272-1892. The examiner
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`can normally be reached M-F 6:00 AM-4:00 PM.
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`Examiner interviews are available via telephone, in-person, and video conferencing using a
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`If attempts to reachthe examiner by telephone are unsuccessful, the examiner’s supervisor,
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`Eliseo Ramos-Feliciano can be reached on 571-272-7925. The fax phone number for the organization
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`wherethis application or proceedingis assigned is 571-273-8300.
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`Information regarding the status of published or unpublished applications may be obtained from
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`Patent Center. Unpublished application information in Patent Center is available to registered users. To
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`file and manage patent submissions in Patent Center, visit: https://patentcenter. uspto.gov.Visit
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`

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`Application/Control Number: 16/263,382
`Art Unit: 2895
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`Page 14
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`questions, contact the Electronic Business Center (EBC) at 866-217-9197(toll-free). If you would like
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`assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA)or
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`571-272-1000.
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`/CARIDAD EVERHART/
`Primary Examiner, Art Unit 2895
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`