`
`AMENDMENT TO THE CLAIMS
`
`The following claim listing replaces all prior listings and versions of the claims:
`
`LISTING OF CLAIMS
`
`1. (Currently Amended) A magnetic sensor comprising:
`
`a first magnetism detection element that outputsa first detection signal;
`
`a second magnetism detection element that outputs a second detection signal; and
`
`a detection circuit that receives the first detection signal and the second detection signal,
`
`wherein:
`
`the detection circuit includes an operationalcircuit,
`
`the operational circuit includes an angle detection circuit and an automatic correction
`
`circuit,
`
`the angle detection circuit is configured to convert eenyverts the first detection signal and
`
`the second detection signal into a third signal,
`
`the third signal has a period T and includesa distortion component having a waveform
`
`including peaks appearing at every (1/16) of the period T of the third signal, and
`
`the detection_automatic correction circuit is configured to correct eerreects the third signal
`
`by correcting distortion component,and
`
`the distortion componentis corrected by subtracting, from the distortion component, a
`
`correction signal obtained by connecting adjacent peaks of the peaks in the waveform ofthe
`
`
`
`distortion waveform component,the-peaks-appearingatevery1/16}oftheperiodTFofthethird
`
`stenat.
`
`2. (Currently Amended) The magnetic sensor according to claim 1, wherein the angle
`
`detection circuit is configured to perform perferms an arctan operation on the first detection
`
`signal and the second detection signal to generate the third signal.
`
`3. (Original) The magnetic sensor according to claim 1, wherein the first magnetism
`
`detection element and the second magnetism detection element are magnetic resistance films
`
`each comprising an NiFealloy.
`
`
`
`Application No.: 16/612,417
`
`4, (Original) The magnetic sensor according to claim 1, wherein each ofthefirst
`
`magnetism detection element and the second magnetism detection element includes
`
`a substrate,
`
`a magnetic resistance film that is provided on the substrate and comprises an NiFe alloy,
`
`and
`
`a protective film that protects the magnetic resistance film.
`
`5. (Original) The magnetic sensor according to claim 1, further comprising:
`
`a silicon substrate; and
`
`a silicon oxide layer provided onthe silicon substrate, wherein
`
`each ofthe first magnetism detection element and the second magnetism detection
`
`elementis disposed onthe silicon oxide layer, and
`
`each ofthe first magnetism detection element and the second magnetism detection
`
`element is a magnetic resistance film comprising an NiFe alloy, and includesa protective layer
`
`covering the magnetic resistance film.
`
`6. (Original) The magnetic sensor according to claim 5, wherein a ratio of a thickness to a
`
`width, in a section, of the magnetic resistance film is less than or equal to 1/1000.
`
`
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