Application No.: 17/190,261
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`AMENDMENT TO THE CLAIMS
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`The following claim listing replaces all prior listings and versions of the claims:
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`1. (Currently Amended) A semiconductor device comprising:
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`LISTING OF CLAIMS
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`a nitride semiconductor chip includinga silicon substrate havingafirst thermal expansion
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`coefficient and an InxGayAlix-yN layer in contact with a surface of the silicon substrate, where 0
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`<x<1,0<y<1,0<x+y<l, the nitride semiconductor chip having a thickness ofat least
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`0.250 mm and at most 0.350 mm, and including a heterojunction interface including a two-
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`dimensional electron gas layer;
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`a plurality of pads including a gate pad, a source pad, and a drain pad,the plurality of
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`pads being provided on a top side of the nitride semiconductorchip;
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`a die pad including Cu and having a second thermal expansion coefficient that is greater
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`than the first thermal expansion coefficient;
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`an adhesive that joins a backside of the nitride semiconductor chip and the die pad;
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`a plurality of terminals including a gate terminal, a plurality of source terminals, and a
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`plurality of drain terminals; and
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`a first electrode whichis electrically connected to the plurality of source terminals and
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`the die pad, wherein:
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`the semiconductor device is a rectangular package havinga first side and a second side
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`that are two opposedsides,
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`the gate terminal and the plurality of source terminals are disposed alongthefirst side of
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`the semiconductor device,
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`the plurality of drain terminals are disposed along the second side of the semiconductor
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`device,
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`the plurality of drain terminals are separated from the die pad,
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`a distance from the secondside to a center of the die pad in a plan view ofthe
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`semiconductor device is longer than a distance from thefirst side to the center of the die pad,
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`each source terminal amongthe plurality of source terminals is connected to the source
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`pad by a plurality of first bonding wires including gold, and an end of each ofthe plurality of
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`first bonding wires is provided at a position overlapping the plurality of source terminals in the
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`plan view, [[and]]
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`Application No.: 17/190,261
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`each drain terminals amongthe plurality of drain terminals is connected to the drain pad
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`by a plurality of second bonding wires including gold, and an end of each ofthe plurality of
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`second bonding wiresis provided at a position overlapping the plurality of drain terminals in the
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`plan view,and
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`each drain terminals amongthe plurality of drain terminals is connected to the drain pad
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`by four of the plurality of second bonding wires.
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`2. (Original) The semiconductor device according to claim 1, further comprising:
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`a second electrode which mutually and electrically connects the plurality of drain
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`terminals.
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`3. (Original) The semiconductor device according to claim 2,
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`wherein the second electrode includes a material same as a material of the die pad.
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`4, (Original) The semiconductor device according to claim 1,
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`wherein the first electrode includes a material same as a material of the die pad.
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`5. (Original) The semiconductor device according to claim 1, further comprising:
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`a third electrode whichis electrically connected to the gate terminal.
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`6. (Original) The semiconductor device according to claim 5,
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`wherein the third electrode includes a material same as a material of the die pad.
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`7. (Original) The semiconductor device according to claim 1,
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`wherein the gate terminal is separated from the die pad.
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`8. (Original) The semiconductor device according to claim 1,
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`wherein the plurality of source terminals and the plurality of drain terminals are disposed
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`respectively at two opposed sides of the rectangular package.
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`Application No.: 17/190,261
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`9. (Original) The semiconductor device according to claim 1,
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`whereinthefirst side of the semiconductor device and the second side of the
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`semiconductor device have a same number of terminals.
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`10. (Original) The semiconductor device according to claim 1, comprising:
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`four drain terminals each of whichis a drain terminal of the plurality of drain terminals
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`and disposed along the secondside of the semiconductor device.
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`11. (Original) The semiconductor device according to claim 1, further comprising:
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`a source sensor terminal disposed along thefirst side of the semiconductor device.
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`12. (Original) The semiconductor device according to claim 11,
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`wherein the source sensor terminal is separated from the die pad.
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`13. (Original) The semiconductor device according to claim 1, wherein:
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`the nitride semiconductor chip hasa first side and a secondside that are two opposed
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`sides,
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`the first side of the nitride semiconductor chip is parallel with the first side of the
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`semiconductor device,
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`the secondside of the nitride semiconductorchip is parallel with the secondside of the
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`semiconductor device, and
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`the plurality of pads are disposedat the first side and the secondside of the nitride
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`semiconductor chip.
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`14. (Original) The semiconductor device according to claim 13, wherein:
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`the source pad is disposed alongthefirst side of the nitride semiconductor chip, and
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`the drain pad is disposed along the secondside of the nitride semiconductor chip
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`15. (Original) The semiconductor device according to claim 1,
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`wherein the plurality of the source terminals are each connected with a same numberof
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`the plurality of first bonding wires.
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`Application No.: 17/190,261
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`16. (Original) The semiconductor device according to claim 11,
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`wherein the source sensor terminal and the source pad are connected with a plurality of
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`bonding wires.
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`17. (Original) The semiconductor device according to claim 1,
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`wherein out of two opposed main surfaces of the die pad, a main surface not joined to the
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`nitride semiconductor chip is exposed from the semiconductor device.
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`18. (Original) The semiconductor device according to claim 1,
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`wherein the plurality of terminals are substantially flush with a lateral surface of the
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`rectangular package.
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`19. (Original) The semiconductor device accordingto claim 1,
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`wherein in a plan view of the semiconductor device, the plurality of terminals are
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`mutually equal in size.
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`20. (Original) The semiconductor device according to claim 1,
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`wherein the plurality of terminals provided onthe first side of the semiconductor device
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`and the plurality of terminals provided on the secondside of the semiconductor device are
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`provided to be line- symmetrical to each other.
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`21. (Original) The semiconductor device according to claim 1,
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`wherein a distance between adjacent onesofthe plurality of terminals provided on the
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`first side of the semiconductor device and a distance between adjacent onesof the plurality of
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`terminals provided on the second side of the semiconductor device are equal.
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`22. (Original) The semiconductor device accordingto claim 1,
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`wherein no bonding wire is connected to the die pad.
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`Application No.: 17/190,261
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`23. (Previously Presented) The semiconductor device according to claim 11,
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`wherein all bonding wires connected to the source pad are connected to the source
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`terminal or the source sensor terminal.
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`24. (Original) The semiconductor device according to claim 1,
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`wherein the nitride semiconductorchip is joined at a center portion of the die pad.
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`25. (Original) The semiconductor device according to claim 1,
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`wherein a thickness tm (mm)ofthe die pad and a length L (mm)ofthe nitride
`semiconductorchip satisfies a relationship of tm > 2.00 x 10° x L? + b (b> 0).
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`26. (New) The semiconductor device according to claim 1,
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`wherein a base area andaside area ofthe plurality of terminals are equal.
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