`
`Docket No.: P200896US00
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`AMENDMENTS TO THE CLAIMS
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`This listing of claims replaces all prior versions of claims in the application.
`
`Listing of Claims:
`
`1. (Original) A nitride semiconductor device, comprising:
`
`a substrate having a first main surface and a second main surface which face in opposite
`
`directions;
`
`a first nitride semiconductor layer of a first conductivity type provided above the first
`
`main surface;
`
`a second nitride semiconductor layer of a second conductivity type provided above the
`
`first nitride semiconductor layer,
`
`the second conductivity type being different from the first
`
`conductivity type;
`
`a first opening which penetrates through the second nitride semiconductor layer to the
`
`first nitride semiconductorlayer;
`
`an electron transport layer and an electron supply layer provided, in that order from a side
`
`on which the substrate is located, above the second nitride semiconductor layer and on an inner
`
`surface ofthe first opening;
`
`a gate electrode provided above the electron supply layer and covering the first opening;
`
`a second opening at a position distanced from the gate electrode, the second opening
`
`penetrating through the electron supply layer and the electron transport layer to the second
`
`nitride semiconductorlayer;
`
`a source electrode provided in the second opening and connected to the second nitride
`
`semiconductorlayer;
`
`a drain electrode provided on a second main surface-side of the substrate;
`
`
`
`Application No.: 17/026,849
`
`Docket No.: P200896US00
`
`a third opening at an outermost edge part in a plan view ofthe substrate, the third opening
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`penetrating through the electron supply layer and the electron transport layer to the second
`
`nitride semiconductor layer; and
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`a potential fixing electrode provided in the third opening, the potential fixing electrode
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`being connected to the second nitride semiconductor layer and in contact with neither the
`
`electron transport layer nor the electron supply layer.
`
`2. (Original) The nitride semiconductor device according to claim 1,
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`wherein in a plan view ofthe substrate, the third opening has an annular shape extending
`
`along an entirety of the outermost edgepart.
`
`3. (Original) The nitride semiconductor device according to claim 2,
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`wherein in a plan view of the substrate, the potential fixing electrode has an annular
`
`shape extending along an entirety of the outermost edgepart.
`
`4. (Original) The nitride semiconductor device according to claim 1,
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`wherein a planar shape of the substrate is a quadrangle, and
`
`the potential fixing electrode is provided as a plurality of island shapes, each located on a
`
`corresponding oneofsides of the substrate in a plan view ofthe substrate.
`
`5. (Original) The nitride semiconductor device according to claim 1,
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`wherein the potential fixing electrode is electrically connected to the source electrode via
`
`a conductive wiring layer.
`
`
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`Application No.: 17/026,849
`
`Docket No.: P200896US00
`
`6. (Original) The nitride semiconductor device according to claim 1, further comprising:
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`a fourth opening provided in the outermost edge part outward of the potential fixing
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`electrode and penetrating through the second nitride semiconductor layer to the first nitride
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`semiconductorlayer.
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`7. (Original) The nitride semiconductor device according to claim 6, further comprising:
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`a high-resistance region provided on a bottom surface of the fourth opening and having a
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`resistance higher than a resistance ofthe first nitride semiconductorlayer.
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`8. (New) Thenitride semiconductor device according to claim 1, wherein
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`a bottom part of the second opening and a bottom part of the third opening are at a same
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`height.
`
`
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