throbber
To:
`
`Subject:
`
`Sent:
`
`Sent As:
`
`Attachments:
`
`Panasonic Corporation (docketingtm@hdp.com)
`
`TRADEMARK APPLICATION NO. 77661408 - SRPD SELF REGULATION - 9432-200443
`
`3/21/2009 4:29:40 PM
`
`ECOM102@USPTO.GOV
`
`Attachment - 1
`Attachment - 2
`Attachment - 3
`Attachment - 4
`Attachment - 5
`Attachment - 6
`Attachment - 7
`Attachment - 8
`Attachment - 9
`Attachment - 10
`Attachment - 11
`Attachment - 12
`Attachment - 13
`Attachment - 14
`Attachment - 15
`Attachment - 16
`Attachment - 17
`Attachment - 18
`Attachment - 19
`
`UNITED STATES PATENT AND TRADEMARK OFFICE
`
`*77661408*
`
`RESPOND TO THIS ACTION:
`http://www.uspto.gov/teas/eTEASpageD.htm
`
`(cid:160)G
`
`ENERAL TRADEMARK INFORMATION:
`http://www.uspto.gov/main/trademarks.htm
`
`(cid:160) (cid:160)(cid:160)(cid:160) SERIAL NO:(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`(cid:160)(cid:160)(cid:160)(cid:160) MARK: SRPD SELF REGULATION(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160) (cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`(cid:160) (cid:160)
`GREGORY A. STOBBS / GARRETT C. DONLEY(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`HARNESS, DICKEY & PIERCE, P.L.C.(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`TROY, MI 48098-2683(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`(cid:160)(cid:160)(cid:160)(cid:160)(cid:160) APPLICANT:(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`(cid:160) (cid:160)(cid:160)(cid:160)(cid:160)(cid:160) CORRESPONDENT’S REFERENCE/DOCKET NO :(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`(cid:160)(cid:160)(cid:160)
`9432-200443(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160) CORRESPONDENT E-MAIL ADDRESS:(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`
`77/661408
`
`(cid:160)(cid:160)(cid:160) CORRESPONDENT ADDRESS:
`(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`
`5445 CORPORATE DR STE 200
`
`(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`
`(cid:160) Panasonic Corporation
`
`docketingtm@hdp.com
`
`OFFICE ACTION
`
`(cid:160)T
`
`(cid:160)I
`
`SSUE/MAILING DATE: 3/21/2009
`
`O AVOID ABANDONMENT, THE OFFICE MUST RECEIVE A PROPER RESPONSE TO THIS OFFICE ACTION WITHIN 6 MONTHS
`OF THE ISSUE/MAILING DATE.
`
`(cid:160)
`

`
`(cid:160)T
`
`he referenced application has been reviewed by the assigned trademark examining attorney.(cid:160) Applicant must respond timely and completely to
`the issue(s) below.(cid:160) 15 U.S.C. §1062(b); 37 C.F.R. §§2.62, 2.65(a); TMEP §§711, 718.03.
`
`No Conflicting Marks Noted
`
`(cid:160)T
`
`he Office records have been searched and there are no similar registered or pending marks that would bar registration under Trademark Act
`Section 2(d), 15 U.S.C. §1052(d). TMEP §704.02.
`
`Information Requirement
`
`(cid:160)I
`
`n order to allow for proper examination of the application, including the final determination as to whether the wording/mark “SRPD” and is
`merely descriptive in relation to the goods/services, the applicant must submit samples of advertisements or promotional materials for the
`goods/services or, if unavailable, for goods/services of the same type.(cid:160) If such materials are not available, the applicant must describe the nature,
`purpose and channels of trade of the goods/services identified in the application.(cid:160) 37 C.F.R. §2.61(b); TMEP §§814 and 1402.01(e).
`
`(cid:160)I
`
`n addition, the applicant must state whether the wording SRPD has any meaning in relation to the goods/services.(cid:160) See 37 C.F.R. §2.61(b);
`TMEP §§808.01(c), 814.
`
`Disclaimer Required
`
`(cid:160)A
`
`pplicant must disclaim the descriptive wording “SELF REGULATION PLASMA DOPING” apart from the mark as shown because it merely
`describes the type of goods/services.(cid:160) See 15 U.S.C. §1056(a); TMEP §§1213, 1213.03(a).
`
`(cid:160)T
`
`he attached dictionary and Internet evidence demonstrates that the wording merely describes goods produced using specific processes and the
`services associated with the processes.
`
`(cid:160)T
`
`he computerized printing format for the Office’s Trademark Official Gazette requires a standardized format for a disclaimer.(cid:160) TMEP
`§1213.08(a)(i).(cid:160) The following is the standard format used by the Office:
`
`No claim is made to the exclusive right to use “SELF REGULATION PLASMA DOPING” apart from the mark as shown.
`
`(cid:160)T
`
`MEP §1213.08(a)(i); see In re Owatonna Tool Co., 231 USPQ 493 (Comm’r Pats. 1983).
`
`(cid:160)E
`
`xplanation of Effect of Disclaimer
`A disclaimer does not physically remove the disclaimed matter from the mark, but rather is a written statement that applicant does not claim
`exclusive rights to the disclaimed wording and/or design separate and apart from the mark as shown in the drawing.
`
`(cid:160)T
`
`he Office can require an applicant to disclaim exclusive rights to an unregistrable part of a mark, rather than refuse registration of the entire
`mark.(cid:160) Trademark Act Section 6(a), 15 U.S.C. §1056(a).(cid:160) Under Trademark Act Section 2(e), 15 U.S.C. §1052(e), the Office can refuse
`registration of the entire mark where it is determined that the entire mark is merely descriptive, deceptively misdescriptive, or primarily
`geographically descriptive of the goods.(cid:160) Thus, the Office may require the disclaimer of a portion of a mark which, when used in connection with
`the goods or services, is merely descriptive, deceptively misdescriptive, primarily geographically descriptive, or otherwise unregistrable (e.g.,
`generic).(cid:160) TMEP §1213.03(a).(cid:160) If an applicant does not comply with a disclaimer requirement, the Office may refuse registration of the entire
`mark.(cid:160) TMEP §1213.01(b).
`
`Basis Clarification –Section 1(b) and Section 44(d)
`
`(cid:160)T
`
`he application specifies both an intent to use basis under Trademark Act Section 1(b) and a claim of priority under Section 44(d) based on a
`foreign application.(cid:160) See 15 U.S.C. §§1051(b), 1126(d); 37 C.F.R. §2.34(a)(2), (a)(4).(cid:160) However, the application does not include a foreign
`registration certificate or a statement indicating whether applicant intends to rely upon the resulting foreign registration under Section 44(e) as an
`additional basis for registration.(cid:160) See 15 U.S.C. §1126(e).
`
`(cid:160)A
`
`lthough Section 44(d) provides a basis for filing and a priority filing date, it does not provide a basis for publication or registration.(cid:160) 37 C.F.R.
`§2.34(a)(4)(iii); TMEP §§1002.02, 1003.03.(cid:160) It is unclear whether applicant intends to rely on Section 44(e) as an additional basis for
`registration.
`
`(cid:160)(cid:160)
`(cid:160)(cid:160)
`(cid:160)(cid:160)
`(cid:160)
`(cid:160)(cid:160)
`(cid:160)
`

`
`Therefore, applicant must clarify the basis in the application by satisfying one of the following:
`
`(1)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`
`(2)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`
`If applicant intends to rely on Section 44(e), in addition to Section 1(b), as a basis for registration, applicant must so specify.(cid:160) In
`addition, (i) applicant’s country of origin must either be a party to a convention or treaty relating to trademarks to which the United
`States is also a party, or must extend reciprocal registration rights to nationals of the United States by law; and (ii) applicant must
`submit a true copy, photocopy, certification or certified copy of the foreign registration from applicant’s country of origin.(cid:160) See 15
`U.S.C. §1126(b)-(c), (e); 37 C.F.R. §2.34(a)(3)(ii); TMEP §§806.02(f), 1002.01, 1004.(cid:160) A copy of the foreign registration must be a
`copy of a document that issued to the applicant by or was certified by the intellectual property office in the applicant’s country of
`origin.(cid:160) TMEP §1004.01.(cid:160) If the foreign registration is not written in English, then applicant must provide an English translation.(cid:160) 37
`C.F.R. §2.34(a)(3)(ii).(cid:160) The translation should be signed by the translator.(cid:160) TMEP §1004.01(b).(cid:160) If the foreign registration has not yet
`issued, or applicant requires additional time to procure a copy of the foreign registration (and English translation, as appropriate),
`applicant must respond to this Office action requesting suspension pending receipt of the foreign registration documentation.(cid:160) TMEP
`§1003.04.; or
`
`If applicant intends to rely solely on an intent to use basis under Section 1(b), while retaining its Section 44(d) priority filing date,
`applicant must specify that it does not intend to rely on Section 44(e) as a basis for registration and request that the mark be approved
`for publication based solely on the Section 1(b) basis.(cid:160) See TMEP §§806.02(f), 806.04(b), 1003.04.(cid:160) Although the mark may be
`approved for publication on the Section 1(b) basis, it will not register until an acceptable allegation of use has been filed.(cid:160) See 15
`U.S.C. §1051(c)-(d); 37 C.F.R. §§2.76, 2.88; TMEP §§1103, 1104.
`
`Response to Office Action
`
`(cid:160)T
`
`here is no required format or form for responding to an Office action.(cid:160) The Office recommends applicants use the Trademark Electronic
`Application System (TEAS) to respond to Office actions online at http://www.uspto.gov/teas/index.html.(cid:160) However, if applicant responds on
`paper via regular mail, the response should include the title “Response to Office Action” and the following information: (cid:160) (1) the name and law
`office number of the examining attorney, (2) the serial number and filing date of the application, (3) the mailing date of this Office action, (4)
`applicant’s name, address, telephone number and e-mail address (if applicable), and (5) the mark. (cid:160) 37 C.F.R. §2.194(b)(1); TMEP §302.03(a).
`
`(cid:160)T
`
`he response should address each refusal and/or requirement raised in the Office action.(cid:160) If a refusal has issued, applicant can argue against the
`refusal; i.e., applicant can submit arguments and evidence as to why the refusal should be withdrawn and the mark should register.(cid:160) To respond to
`requirements, applicant should set forth in writing the required changes or statements and request that the Office enter them into the application
`
`record.(cid:160)(cid:160)
`
`The response must be personally signed or the electronic signature manually entered by applicant or someone with legal authority to bind
`applicant (i.e., a corporate officer of a corporate applicant, the equivalent of an officer for unincorporated organizations or limited liability
`company applicants, a general partner of a partnership applicant, each applicant for applications with multiple individual applicants).(cid:160) TMEP
`§§605.02, 712.
`
`/Rudy R. Singleton/
`United States Patent and Trademark Office
`Trademark Examining Attorney
`Law Office 102
`(571) 272-9262
`
`(cid:160)(cid:160)
`RESPOND TO THIS ACTION:(cid:160)Applicant should file a response to this Office action(cid:160)online using the form at
`http://www.uspto.gov/teas/eTEASpageD.htm, waiting 48-72 hours if applicant received notification of the Office action via e-mail.(cid:160)(cid:160)For
`technical assistance with the form, please e-mail TEAS@uspto.gov.(cid:160) For(cid:160)questions about the Office action itself, please contact the assigned
`examining attorney.(cid:160)(cid:160) Do not respond to this Office action by e-mail;(cid:160)the USPTO does not accept e-mailed responses .
`
`(cid:160)I
`
`f responding by paper mail, please include the following information: the application serial number, the mark, the filing date and the name,
`title/position, telephone number and e-mail address of the person signing the response.(cid:160) Please use the following address: Commissioner for
`Trademarks, P.O. Box 1451, Alexandria, VA 22313-1451.
`
`(cid:160)S
`
`TATUS CHECK: Check the status of the application at least once every six months from the initial filing date using the USPTO Trademark
`Applications and Registrations Retrieval (TARR) online system at http://tarr.uspto.gov.(cid:160) When conducting an online status check, print and
`maintain a copy of the complete TARR screen.(cid:160) If the status of your application has not changed for more than six months, please contact the
`assigned examining attorney.
`
`(cid:160)
`(cid:160)
`(cid:160)(cid:160)
`(cid:160)(cid:160)(cid:160)
`

`
`(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)
`

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`iOi‘u' IMPLANTA TiOi‘u' TECHNOLOGY.‘ ‘ifitn international’ Conference on ion irnpiantation Tecnnoiogy — ii T 2005. AIP
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`that achieves tight control on dosimetry and uniformity has been
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`duration. Combined with the throughput advantage at low energy against the conventional ion
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`0 ® The ADS is Operated by the Smithsonian Astrophysical Observatory under NASA Grant NN><D9AEl39G
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`

`
`httpzfldictionarvreference. comfsearch?q=self-regulation3.;r=EE
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`-
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`Dictionarvcorn Unabridged
`Based on the Random House Dictionary, © Random House, Inc. 2IJDEI.
`Cite This Source
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`The American Heritage® Dictionary of the English Language, Fourth Edition
`Coiwritxht © 20% bx-' Houdrrton Mifflin Combenv.
`Published by Houghton Mifflin Company. All rights reserved.
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`uspro lippllcation #: 2ooso233r23
`Title: Plasma doping method and apparatus
`Abstract: There are provided a plasma doping method and an apparatus which have excellent reproducibility ofthe
`concentration ofimpurities implanted into the surfaces ofsamples. In a vacuum container, in a state where gas is ejected
`toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is
`exhausted from the vacuum containerthrough a turbo molecular pump as an exhaust device, and the inside ofthe vacuum
`container is maintained at a predetermined pressure through a pressure adjustmentyalye, the distance between the
`counter electrode and the sample electrode is setto be sufficientlv small with respectto the area ofthe counter electrode to
`prevent plasma from being diffused outward, and capacitive—coupled plasma is generated between the counter electrode
`and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains
`impurities such as diborane or phosphine. (end ofabstract)
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`Agent: l‘u1cdermot't'u"ifill &Emer_y LLF'—Washington Do Us
`Inventors: Tomohiro Okumura, Yuichiro Sasaki,l»<atsumi0l<ashita,Hiroyuki Ito, EIun'ii‘u1izuno
`uspro iippllcaton av: 2ooeo233r23 - Class: 433513 (USPTO)
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`Plasma doping method and apparatus descrlptlonlclalms
`
`The Patent Description 52 Claims data below is from USPTO Patent Application 2ooso233r23, Plasma doping method and
`apparatus.
`
`Let U3 l
`
`Licen:
`Invention
`
`Free lr
`
`uu:wu.|dea4
`
`

`
`httpzflwi-vwtreshpatents. com.-‘F’lasma-doping-methoI:|-ani:|-apparatus-I:|t2DD8D925ptan2DDED233F"23. php
`D3i'2‘li"2DD9 D3:t1E:58 PM
`
`
`
`BriefPatent Description — Full Patent Description — Patentepplication Claims
`
`This is a continuation application oflnternational Application No. l"CTfJl"2DD?fUE-2920?, filed Oct. 2, 2DDI-'.
`
`BACKGROUND OF THE INVENTION
`
`The present invention relates to a plasma doping method and apparatus for implanting impurities into the surfaces of
`samples.
`
`For example, in fabrication ofa MOS transistor, a thin oxide film is formed on the surface ofa silicon substrate as a sample,
`and then a gate electrode is formed on the sample using a CVD apparatus orthe like. Thereaiter, impurities are implanted
`thereto by a plasma doping method as described above. using the gate electrode as a mask. Elv implanting impurities, for
`example, a metal wiring layer is formed on the sample where source and drain areas are formed in the sample to provide a
`MOS transistor.
`
`As a technique for implanting impurities into the surface ofa solid sample, there has been known a plasma doping method
`fnr implanting inniwerl impiiritiee into a enlirt with lnw energy (refertn Patent Dneiiment 1 , for example) FIG 5 illiietratee the
`schematic structure ofa plasma processing apparatus for use in the plasma doping method as a conventional impurity
`implantation method described in the aforementioned Patent Document 1. In FIG. 5, there is provided a sample electrode
`106 for placing thereon a sample 11]? formed ofa silicon substrate, in a vacuum container 101. Within the vacuum container
`101, there are provided a gas supply device 102 for supplying a doping material gas containing desired elements, such as
`EI2Hl3. and a pump 108 for decreasing the pressure within the vacuum container 101. which enables maintaining the inside
`ofthe vacuum container 101 at a predetermined pressure. A microwave waveguide 121 radiates a microwave into the
`vacuum container 101 through a guarts plate 122 as a dielectric window. Through the interaction ofthe microwave and the
`DC magnetic field produced by an electromagnet 123, there is formed a magnetic—t'ield microwave plasma (electron
`cyclotron resonance plasma) 124 within the vacuum container 101. A high—freguency power supply 112 is connected to the
`sample electrode 106 through a capacitor 125, which enables controlling the potential ofthe sample electrode 1116. Further,
`the conventional distance between the electrode and the guarts plate 122 is in the range of2DD to 3% mm.
`
`In the plasma processing apparatus having such a structure, the introduced doping material gas, such as EIZHE, is
`changed into plasma by the plasma generating means constituted bythe microwave waveguide 121 and the electromagnet
`123. and boron ions in the plasma 124 are implanted into the surface ofthe sample 11]? bythe high—freguency power supply
`112.
`
`As aspects ofthe plasma processing apparatus for use in plasma doping, there are known one which uses a helicon-wave
`plasma source (referto Patent Document 2, for example), one which uses an inductively-coupled plasma source (referto
`Patent Document 3, for example), and one which uses a parallel-plate plasma source (referto Patent Document :1, for
`example), as well as the aforementioned apparatus which uses an electron cyclotron resonance plasma source.
`
`Patent Document 1: US. Pat. No. 4,91 2,055
`
`Patent Llocument 2: Japanese Unexamined Patent Publication No. 2UU2—1.lUrH2
`
`Patent Document 3: Japanese Unexamined Patent Publication No.2DD4-41595
`
`Patent Document 4: Published Japanese translation ofPCT International Publication for Patent!-\pp|ication. No. 2IJD2-
`
`

`
`httpzflwi-vwfreshpatents. com.-‘F’lasma-doping-methoc|-and-apparatus-c|t2DD8D925ptan2DDED233F"23. php
`D3i'2‘li"2DD9 D3:t1E:58 PM
`
`Patent Document 4: Published Japanese translation ofPCT International Publication for PatentApplication, No. 2002-
`522399
`
`However, these conventional methods have an issue ofpoor reproducibilitv ofthe amount ofimplanted impurities (the
`amount ofdose).
`
`The present inventors have found, from various experiments, thatthe poor reproducibilitv is caused bvthe increase in the
`densitv ofboron—based radicals within plasma. As plasma doping processing is successivelv performed, a thin film
`containing boron (boron—based thin film) is graduallv deposited on the innerwall surface ofthe vacuum container. It is
`considered that, in a case ofusing EI2HE as the doping material gas, along with the increase in the thickness ofthe
`deposited film, the probability ofadsorption ofboron—based radicals to the innerwall surface ofthe vacuum container is
`gradually decreased, and accordingly, the density ofboron—based radicals in plasma is gradually increased. Further, ions
`within plasma are accelerated bvthe potential difference between the plasma and the innerwall ofthe vacuum container
`and then impinge on the boron—based thin film deposited on the innerwall surface ofthe vacuum container, thereby causing
`sputtering. The sputtering thus caused draduallv increases the amount ofparticles containing boron which are supplied into
`the plasma. Conseguentlv, the amount ofdose is graduallv increased. The degree ofthe increase is significantlv large, and
`alter plasma doping processing is repeatedlv carried out several hundreds oftimes, the amount ofdose has been
`increased to about 3.3 to 6.? times the amount ofdose that is implanted in plasma doping processing performed just after
`the cleaning ofthe innerwall ofthe vacuum containerwith water and an organic solvent.
`
`Along with the generation ofplasma and stoppage thereof, the temperature ofthe innerwall surface ofthe vacuum container
`is varied, which also changes the probabilitv ofadsorption ofboron—based radicals to the innerwall surface. This also
`causes the change in the amount ofdose.
`
`The present invention is made in view ofthe aforementioned issues in the prior art, and an object ofthe present invention is
`to provide a plasma doping method and apparatus which are capable ofcontrolling the amount ofimpurities implanted to
`sample surfaces with higher accuracv and providing highlv reproducible impurity concentration.
`
`SUMMARY OF THE INVENTION
`
`In accomplishing these and other aspects, according to a first aspect ofthe present invention, there is provided a plasma
`doping method comprising:
`
`placing a sample on a sample electrode within a vacuum container;
`
`supplving an electric powerto the sample electrode, while supplying a plasma doping gas into the vacuum container,
`exhausting gas from the vacuum container, and controlling an inside ofthe vacuum containerto a plasma doping pressure,
`and generating plasma between a surface ofthe sample and a surface ofa counter electrode within the vacuum container;
`and
`
`performing plasma doping processing to implant impurities into the surface ofthe sample, in a state where a following
`equation (1) is satisfied, where S is an area ofthe surface which is faced to the counter electrode, out ofsurfaces ofthe
`sample, and G is a distance between the sample electrode and the counter electrode.
`
`Continue reading about Plasma doping method and apparatus...
`Full patent description for Plasma doping method and apparatus
`
`

`
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`BriefPatent Description — Full Patent Description — Patentvkpplication Claims
`
`Click on the above for other options relating to this Plasma doping method and apparatus patent application.
`
`Patent Implications in related categories:
`
`20090050023 — Plasma ion doping method and apparatus — In plasma ion doping operations, a wafer is positioned on a
`susceptorvvithin a reaction chamber and an ion doping source gas is plasmalvzed in an upper part ofthe reaction chamber
`above a major surface ofthe vvafervvhile supplving a control gas into the reaction chamber in a
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